JPS5522887A - Mis type field effect semiconductor device - Google Patents
Mis type field effect semiconductor deviceInfo
- Publication number
- JPS5522887A JPS5522887A JP10884378A JP10884378A JPS5522887A JP S5522887 A JPS5522887 A JP S5522887A JP 10884378 A JP10884378 A JP 10884378A JP 10884378 A JP10884378 A JP 10884378A JP S5522887 A JPS5522887 A JP S5522887A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio
- laminated
- successively
- parasitic capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To eliminate a parasitic capacitance due to a PN junction by prodividing the circumference and bottom face of a source and drain layer adjacent to a field odidization layer buried.
CONSTITUTION: A field oxidization film 2 is provided in a p-type Si substarate having an n-type bury layer 24 provided therein, an n epitaxial-layer is layer is laminated to from a field oxidization film 23 selectively. Successively, an SiO26, Si3N47 and SiO28 are laminated to prevent a charge transfer between a gate film 6 and Si3N47. Successively, a p-type Si 9 is laminated, a Mo is covered, and a gate 15, lead 11 and capacity 36 are formed by a selective etching. According to such a construction, the occurrence of a parasitic capacitance due to a pn-junction can be prevented. Successively, an SiO216 is covered, an opening is selectively provided, and an Al electrode 18 is formed. This MISFET divece has a less parasitic capacitance, therefore, being very excellent in a superhigh frequency characteristic.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10884378A JPS5522887A (en) | 1978-09-05 | 1978-09-05 | Mis type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10884378A JPS5522887A (en) | 1978-09-05 | 1978-09-05 | Mis type field effect semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3062571A Division JPS5624385B1 (en) | 1971-05-07 | 1971-05-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5522887A true JPS5522887A (en) | 1980-02-18 |
JPS5755305B2 JPS5755305B2 (en) | 1982-11-24 |
Family
ID=14494976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10884378A Granted JPS5522887A (en) | 1978-09-05 | 1978-09-05 | Mis type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5522887A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587869A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Semiconductor device |
JPS5831574A (en) * | 1981-08-19 | 1983-02-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
WO2001018873A1 (en) * | 1999-09-09 | 2001-03-15 | Infineon Technologies Ag | Mos transistor and method for producing the same |
US11251577B2 (en) | 2017-03-14 | 2022-02-15 | Sw Automatisierung Gmbh | Arrangement apparatus for receiving and arranging wire sections |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940115A (en) * | 1972-08-16 | 1974-04-15 |
-
1978
- 1978-09-05 JP JP10884378A patent/JPS5522887A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940115A (en) * | 1972-08-16 | 1974-04-15 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587869A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Semiconductor device |
JPS5831574A (en) * | 1981-08-19 | 1983-02-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
WO2001018873A1 (en) * | 1999-09-09 | 2001-03-15 | Infineon Technologies Ag | Mos transistor and method for producing the same |
US6563179B2 (en) | 1999-09-09 | 2003-05-13 | Infineon Technologies | MOS transistor and method for producing the transistor |
US11251577B2 (en) | 2017-03-14 | 2022-02-15 | Sw Automatisierung Gmbh | Arrangement apparatus for receiving and arranging wire sections |
Also Published As
Publication number | Publication date |
---|---|
JPS5755305B2 (en) | 1982-11-24 |
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