JPS56112756A - Manufacture of complementary insulating gate field effect semiconductor device - Google Patents

Manufacture of complementary insulating gate field effect semiconductor device

Info

Publication number
JPS56112756A
JPS56112756A JP1451680A JP1451680A JPS56112756A JP S56112756 A JPS56112756 A JP S56112756A JP 1451680 A JP1451680 A JP 1451680A JP 1451680 A JP1451680 A JP 1451680A JP S56112756 A JPS56112756 A JP S56112756A
Authority
JP
Japan
Prior art keywords
source
polysilicon
channel side
drain
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1451680A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1451680A priority Critical patent/JPS56112756A/en
Publication of JPS56112756A publication Critical patent/JPS56112756A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the bonding breakdown and electrode wiring disconnection of the C-MOSFET by forming a source and a drain through polysilicon, further doping an N type impurity at the N channel side to increase the depth of the junction and forming an electrode on the polysilicon. CONSTITUTION:Three layers of polysilicon layer 8, silicon oxide film 14 and silicon nitride film 15 are formed on an N type substrate 1 having a P type well region 2 and a gate oxide film 7, a window is opened selectively at the three layers, source and drain regions 10a, 10b, 11a, 11b are formed, with the silicon nitride film on the polysilicon as a mask the source and the drain are selectively oxidized on the surfaces, the polysilicon on the N type source and drain regions is exposed, phosphorus is diffused therein, the junction between the source and the drain regions of the P channel side is increased in depth, and the film 15 of the P channel side is converted into the silicon oxide film 17 containing phosphorus. Thus, the C-MOSFET having high density and difficulty in disconnection of aluminum wire can be formed.
JP1451680A 1980-02-08 1980-02-08 Manufacture of complementary insulating gate field effect semiconductor device Pending JPS56112756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1451680A JPS56112756A (en) 1980-02-08 1980-02-08 Manufacture of complementary insulating gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1451680A JPS56112756A (en) 1980-02-08 1980-02-08 Manufacture of complementary insulating gate field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112756A true JPS56112756A (en) 1981-09-05

Family

ID=11863245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1451680A Pending JPS56112756A (en) 1980-02-08 1980-02-08 Manufacture of complementary insulating gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112756A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63131564A (en) * 1986-11-21 1988-06-03 Toshiba Corp Protective circuit for output
US8089078B2 (en) 2008-03-28 2012-01-03 Sanken Electric Co., Ltd. Light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63131564A (en) * 1986-11-21 1988-06-03 Toshiba Corp Protective circuit for output
US8089078B2 (en) 2008-03-28 2012-01-03 Sanken Electric Co., Ltd. Light emitting device

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