JPS56133869A - Mos type semiconductor device and manufacture thereof - Google Patents

Mos type semiconductor device and manufacture thereof

Info

Publication number
JPS56133869A
JPS56133869A JP3629580A JP3629580A JPS56133869A JP S56133869 A JPS56133869 A JP S56133869A JP 3629580 A JP3629580 A JP 3629580A JP 3629580 A JP3629580 A JP 3629580A JP S56133869 A JPS56133869 A JP S56133869A
Authority
JP
Japan
Prior art keywords
diffusion layers
oxide film
film
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3629580A
Other languages
Japanese (ja)
Inventor
Kentaro Yoshioka
Masayoshi Ino
Takasumi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP3629580A priority Critical patent/JPS56133869A/en
Publication of JPS56133869A publication Critical patent/JPS56133869A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To readily obtain stable characteristics and enable the channel to be made shorter by arranging the gate insulating layer below the surfaces of the source and drain regions. CONSTITUTION:In a monocrystalline silicon substrate 11, diffusion layers (source and drain regions) 12 are formed having the opposite conductivity type thereto, and a thick thermally oxidized film (selective oxide film) 13 is formed in the parasitic region on the substrate 11. Between the diffusion layers 12 and 12, a gate oxide film 14 is formed, on which a polycrystalline silicon film 15 is formed as a gate electrode. A wiring metal 16 is provided to each region, and insulating films 17 are placed between the wiring metals 16. The gate oxide film 14 is arranged below the surfaces of the diffusion layers 12.
JP3629580A 1980-03-24 1980-03-24 Mos type semiconductor device and manufacture thereof Pending JPS56133869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3629580A JPS56133869A (en) 1980-03-24 1980-03-24 Mos type semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3629580A JPS56133869A (en) 1980-03-24 1980-03-24 Mos type semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56133869A true JPS56133869A (en) 1981-10-20

Family

ID=12465811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3629580A Pending JPS56133869A (en) 1980-03-24 1980-03-24 Mos type semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56133869A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420664A (en) * 1987-07-15 1989-01-24 Toshiba Corp Manufacture of semiconductor device
JPH0316267A (en) * 1989-06-14 1991-01-24 Oki Electric Ind Co Ltd Manufacture of buried gate mos-fet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390770A (en) * 1977-01-20 1978-08-09 Toshiba Corp Production of semiconductor device
JPS54117691A (en) * 1978-03-06 1979-09-12 Matsushita Electric Ind Co Ltd Production of insulating gate-type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390770A (en) * 1977-01-20 1978-08-09 Toshiba Corp Production of semiconductor device
JPS54117691A (en) * 1978-03-06 1979-09-12 Matsushita Electric Ind Co Ltd Production of insulating gate-type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420664A (en) * 1987-07-15 1989-01-24 Toshiba Corp Manufacture of semiconductor device
JPH0316267A (en) * 1989-06-14 1991-01-24 Oki Electric Ind Co Ltd Manufacture of buried gate mos-fet

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