JPS57114274A - Electrode for semiconductor device and manufacture thereof - Google Patents
Electrode for semiconductor device and manufacture thereofInfo
- Publication number
- JPS57114274A JPS57114274A JP76581A JP76581A JPS57114274A JP S57114274 A JPS57114274 A JP S57114274A JP 76581 A JP76581 A JP 76581A JP 76581 A JP76581 A JP 76581A JP S57114274 A JPS57114274 A JP S57114274A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- accumulated
- silicide
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 8
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To flatten an electrode for a semiconductor device by forming a contacting electrode of two layers made of a metallic layer and a silicide layer on the diffused region of the device. CONSTITUTION:A selectively oxidized region 101 and a gate insulating film 104 are formed on a semiconductor substrate 1. Then, a polycrystalline silicon layer 110 is accumulated to form a gate electrode 105. With an interlayer insulating layer 111 as a mask the substrate is sidewisely etched. Then, an oxidized film is formed on the side face. Subsequently, an unnecessary film is removed. An impurity is injected to form source and drain regions 102, 103. Subsequently, metallic layers 106, 107 of metal such as W, Mo, etc., are accumulated. Then, a silicide forming metal layer of metal such as Pt and a polycrystalline Si are accumulated to form silicide layers 108, 109. In this manner, the surface can be flattened and the source and drain electrodes can be formed by a self-alignment. Accordingly, the device can be increased in density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP76581A JPS57114274A (en) | 1981-01-08 | 1981-01-08 | Electrode for semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP76581A JPS57114274A (en) | 1981-01-08 | 1981-01-08 | Electrode for semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57114274A true JPS57114274A (en) | 1982-07-16 |
Family
ID=11482784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP76581A Pending JPS57114274A (en) | 1981-01-08 | 1981-01-08 | Electrode for semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57114274A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851369A (en) * | 1987-12-04 | 1989-07-25 | U.S. Philips Corporation | Method of establishing a structure of electrical interconnections on a silicon semiconductor device |
| JPH02156542A (en) * | 1988-12-08 | 1990-06-15 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
-
1981
- 1981-01-08 JP JP76581A patent/JPS57114274A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851369A (en) * | 1987-12-04 | 1989-07-25 | U.S. Philips Corporation | Method of establishing a structure of electrical interconnections on a silicon semiconductor device |
| JPH02156542A (en) * | 1988-12-08 | 1990-06-15 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5736844A (en) | Semiconductor device | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS55157241A (en) | Manufacture of semiconductor device | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
| JPS5766671A (en) | Semiconductor device | |
| JPS5515230A (en) | Semiconductor device and its manufacturing method | |
| JPS54143076A (en) | Semiconductor device and its manufacture | |
| JPS5664467A (en) | Mos type semiconductor device | |
| JPS56130970A (en) | Manufacture of semiconductor device | |
| JPS54117690A (en) | Production of semiconductor device | |
| JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
| JPS55120170A (en) | Mos type semiconductor device | |
| JPS56133869A (en) | Mos type semiconductor device and manufacture thereof | |
| JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
| JPS566464A (en) | Semiconductor device and manufacture thereof | |
| JPS55153370A (en) | Manufacturing method of semiconductor device | |
| JPS5710265A (en) | Field effect transistor | |
| JPS57102052A (en) | Manufacture of semiconductor device | |
| JPS5773977A (en) | Manufacture of semiconductor device | |
| JPS5688364A (en) | Semiconductor device | |
| JPS5752169A (en) | Semiconductor device and manufacture thereof |