JPS5515230A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS5515230A
JPS5515230A JP8799678A JP8799678A JPS5515230A JP S5515230 A JPS5515230 A JP S5515230A JP 8799678 A JP8799678 A JP 8799678A JP 8799678 A JP8799678 A JP 8799678A JP S5515230 A JPS5515230 A JP S5515230A
Authority
JP
Japan
Prior art keywords
film
poly
etched
layer
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8799678A
Other languages
Japanese (ja)
Other versions
JPS6153864B2 (en
Inventor
Tetsushi Sakai
Yoshiharu Kobayashi
Yasusuke Yamamoto
Hiroki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8799678A priority Critical patent/JPS5515230A/en
Priority to CA331,965A priority patent/CA1129118A/en
Priority to GB7924980A priority patent/GB2030002B/en
Priority to FR7918558A priority patent/FR2433833A1/en
Priority to DE19792928923 priority patent/DE2928923A1/en
Priority to US06/058,417 priority patent/US4379001A/en
Priority to NLAANVRAGE7905607,A priority patent/NL189102C/en
Publication of JPS5515230A publication Critical patent/JPS5515230A/en
Publication of JPS6153864B2 publication Critical patent/JPS6153864B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a bi-polar transistor with a high integration rate by using an inverse peaozoid mask.
CONSTITUTION: A poly Si 42 and Si2N243 are, laminated on a n-type Si substrate 41, and a SiO247 having the density distribution to a thickness direction is etched in an inverse peaozoid shape by Si2N446. After A B ion implantation, the film 43 is etched to be turned to a film 50 and heat-oxidized to form a SiO251. Successively, a film 50 is etched to be changed to a film 53, is provided for a B ion implantation after covering it with a poly Si and conduction layer 55 to 57 are made selectively. After heat treatment, the poly Si is selectively etched and a poly Si 60 is made narrower than SiO2N453 in width. After the film 47 has been removed, the poly Si 55 is selectively removed, and when a heat oxidization film 65 is made, a P+ layer is formed. Successively, after injection of ion, a shallow P layer 67 is formed, thereafter the film 53 is removed and the film 65 is ion-implanated by using a mask 65 to form a N layer 69 under the lower face of the film 68. Successively, a hole is provided in the film 65 to made an electrode 71 and 72. Thus, a device with a high integration rate can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP8799678A 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method Granted JPS5515230A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8799678A JPS5515230A (en) 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method
CA331,965A CA1129118A (en) 1978-07-19 1979-07-17 Semiconductor devices and method of manufacturing the same
GB7924980A GB2030002B (en) 1978-07-19 1979-07-18 Semiconductor devices and methods of manufacturing them
FR7918558A FR2433833A1 (en) 1978-07-19 1979-07-18 SEMICONDUCTOR HAVING SILICON REGIONS IN THE FORM OF SPECIFICALLY PROFILE PROJECTIONS AND ITS MANUFACTURING METHOD
DE19792928923 DE2928923A1 (en) 1978-07-19 1979-07-18 SEMICONDUCTOR DEVICE
US06/058,417 US4379001A (en) 1978-07-19 1979-07-18 Method of making semiconductor devices
NLAANVRAGE7905607,A NL189102C (en) 1978-07-19 1979-07-19 TRANSISTOR AND METHOD FOR MANUFACTURING THAT.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8799678A JPS5515230A (en) 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5515230A true JPS5515230A (en) 1980-02-02
JPS6153864B2 JPS6153864B2 (en) 1986-11-19

Family

ID=13930402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8799678A Granted JPS5515230A (en) 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5515230A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135976A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Manufacture of field effect semiconductor device of junction type
JPS57109371A (en) * 1980-12-26 1982-07-07 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS62367A (en) * 1985-06-26 1987-01-06 フジタ工業株式会社 Non-combustible building
WO1991003841A1 (en) * 1989-09-09 1991-03-21 Tadahiro Ohmi Element, method of fabricating the same, semiconductor element and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135976A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Manufacture of field effect semiconductor device of junction type
JPS57109371A (en) * 1980-12-26 1982-07-07 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS62367A (en) * 1985-06-26 1987-01-06 フジタ工業株式会社 Non-combustible building
WO1991003841A1 (en) * 1989-09-09 1991-03-21 Tadahiro Ohmi Element, method of fabricating the same, semiconductor element and method of fabricating the same

Also Published As

Publication number Publication date
JPS6153864B2 (en) 1986-11-19

Similar Documents

Publication Publication Date Title
JPS5640269A (en) Preparation of semiconductor device
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS54154272A (en) Contact forming method for semiconductor device
JPS5568651A (en) Manufacturing method of semiconductor device
JPS54130883A (en) Production of semiconductor device
JPS5444880A (en) Manufacture of semiconductor device
JPS5456381A (en) Production of semiconductor device
JPS5780768A (en) Semiconductor device
JPS5693370A (en) Manufacture of mos-type semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5524468A (en) Manufacture of semiconductor
JPS54124687A (en) Production of semiconductor device
JPS5756965A (en) Manufacture of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS5753981A (en) Manufacture of semiconductor device
JPS6430264A (en) Manufacture of semiconductor device
JPS5451383A (en) Production of semiconductor element
JPS5710246A (en) Manufacture of semiconductor device
JPS5515244A (en) Manufacturing method for mos type semiconductor device
JPS5754347A (en) Selective oxidation
JPS5756966A (en) Manufacture of semiconductor device
JPS5512775A (en) Manufacturing method of semiconductor
JPS6442860A (en) Manufacture of lateral bipolar transistor
JPS5244583A (en) Method of treating semiconductor sustrate
JPS57181157A (en) Manufacture of semiconductor integrated circuit device