JPS5754347A - Selective oxidation - Google Patents

Selective oxidation

Info

Publication number
JPS5754347A
JPS5754347A JP55130935A JP13093580A JPS5754347A JP S5754347 A JPS5754347 A JP S5754347A JP 55130935 A JP55130935 A JP 55130935A JP 13093580 A JP13093580 A JP 13093580A JP S5754347 A JPS5754347 A JP S5754347A
Authority
JP
Japan
Prior art keywords
nitride film
silicon
mask
layer
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55130935A
Other languages
Japanese (ja)
Other versions
JPS6142425B2 (en
Inventor
Takeshi Ishihara
Keiichi Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55130935A priority Critical patent/JPS5754347A/en
Publication of JPS5754347A publication Critical patent/JPS5754347A/en
Priority to US06/466,142 priority patent/US4465705A/en
Publication of JPS6142425B2 publication Critical patent/JPS6142425B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Abstract

PURPOSE:To prevent unevenness of rise, etc., of an insulating oxide layer to be generated at the circumferential part of a mask to be caused by oxidation in the lateral direction of a substrate when the surface of the silicon substrate is to be oxidized selectively making a silicon nitride film as the mask for oxidation. CONSTITUTION:A resist film 2 having the desired pattern is formed on the silicon substrate 1, nitrogen ions are implanted therein to form an ion implanted layer 3 at the inside part of the surface of silicon substrate , and when heat treatment is performed, nitrogen ions lying scattered between lattices constitute the silicon nitride film 4. Oxidation treatment is performed making the nitride film 4 thereof as the mask to convert the silicon layer 1a on the nitride film 4 and the other surface of the silicon layer into oxide films 51, 52 respectively, and when the whole of surface is etched to remove the oxide film up to remove the silicon nitride film 4, the selective oxide films 52 having precise pattern can be formed.
JP55130935A 1980-05-19 1980-09-19 Selective oxidation Granted JPS5754347A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55130935A JPS5754347A (en) 1980-09-19 1980-09-19 Selective oxidation
US06/466,142 US4465705A (en) 1980-05-19 1983-02-14 Method of making semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130935A JPS5754347A (en) 1980-09-19 1980-09-19 Selective oxidation

Publications (2)

Publication Number Publication Date
JPS5754347A true JPS5754347A (en) 1982-03-31
JPS6142425B2 JPS6142425B2 (en) 1986-09-20

Family

ID=15046134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130935A Granted JPS5754347A (en) 1980-05-19 1980-09-19 Selective oxidation

Country Status (1)

Country Link
JP (1) JPS5754347A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098640A (en) * 1983-11-02 1985-06-01 Sony Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098640A (en) * 1983-11-02 1985-06-01 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6142425B2 (en) 1986-09-20

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