JPS56111241A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56111241A
JPS56111241A JP1126780A JP1126780A JPS56111241A JP S56111241 A JPS56111241 A JP S56111241A JP 1126780 A JP1126780 A JP 1126780A JP 1126780 A JP1126780 A JP 1126780A JP S56111241 A JPS56111241 A JP S56111241A
Authority
JP
Japan
Prior art keywords
layer
mask
reactive ion
ion etching
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1126780A
Other languages
Japanese (ja)
Inventor
Satoru Maeda
Mamoru Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1126780A priority Critical patent/JPS56111241A/en
Publication of JPS56111241A publication Critical patent/JPS56111241A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a device of higher integration and improved properties, by forming a field oxidized film on a substrate surface without employing the selective oxidation method, forming selectively an inversion preventing layer to the said portion and preventing oozing to the device region. CONSTITUTION:An SiO2 12, a polycrystalline Si 13 are stacked on a P type Si substrate 11, and a resist mask 14 is coated to form P<+> layer 15 by B ion implantation. After removal of the mask 14 and the evaporation of Al 16, the layer 13 is removed by a reactive ion etching. Then with the Al 16 as a mask, the SiO2 12 is etched by a reactive ion etching for an opening and the Al 16 is exfoliated. Because of the reactive ion etching, side etching on the oxidized film 12 is virtually zero. Moreover, as no oozing by ion implantation takes place on the P<+> layer, a minute device forming region as designed can be obtained. Therefore, by employing the conventional method to form a MOSFET, a device of higher integration and improved properties can be obtained.
JP1126780A 1980-02-01 1980-02-01 Preparation of semiconductor device Pending JPS56111241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1126780A JPS56111241A (en) 1980-02-01 1980-02-01 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1126780A JPS56111241A (en) 1980-02-01 1980-02-01 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111241A true JPS56111241A (en) 1981-09-02

Family

ID=11773182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1126780A Pending JPS56111241A (en) 1980-02-01 1980-02-01 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111241A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500046A (en) * 1983-09-30 1986-01-09 ヒュ−ズ・エアクラフト・カンパニ− Method of manufacturing MOSFET devices
JPH05243373A (en) * 1984-05-15 1993-09-21 Digital Equip Corp <Dec> Method for manufacturing integrated circuit chip
CN103746045A (en) * 2014-02-10 2014-04-23 中国电子科技集团公司第四十四研究所 Method for inhibiting surface high-temperature inversion of P-type super-high-resistance monocrystalline silicon material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500046A (en) * 1983-09-30 1986-01-09 ヒュ−ズ・エアクラフト・カンパニ− Method of manufacturing MOSFET devices
JPH05243373A (en) * 1984-05-15 1993-09-21 Digital Equip Corp <Dec> Method for manufacturing integrated circuit chip
CN103746045A (en) * 2014-02-10 2014-04-23 中国电子科技集团公司第四十四研究所 Method for inhibiting surface high-temperature inversion of P-type super-high-resistance monocrystalline silicon material

Similar Documents

Publication Publication Date Title
JPS5791535A (en) Manufacture of semiconductor device
JPS54142981A (en) Manufacture of insulation gate type semiconductor device
JPS53135263A (en) Production of semiconductor device
JPS56111241A (en) Preparation of semiconductor device
JPS57155769A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS6432646A (en) Element isolation structure and manufacture thereof
JPS56111243A (en) Preparation of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS56135975A (en) Manufacture of semiconductor device
JPS54153583A (en) Semiconductor device
JPS56125846A (en) Surface treatment of semiconductor
JPS5687339A (en) Manufacture of semiconductor device
JPS54124687A (en) Production of semiconductor device
JPS57102045A (en) Manufacture of semiconductor device
JPS5548950A (en) Manufacturing of semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS54139486A (en) Manufacture of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS57202756A (en) Manufacture of semiconductor device
JPS6424460A (en) Manufacture of semiconductor device
JPS56140642A (en) Manufacture of semiconductor device
JPS57102048A (en) Manufacture of semiconductor device
JPS56158446A (en) Manufacture of semiconductor integrated circuit
JPS54129983A (en) Manufacture of semiconductor device