JPS57102045A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57102045A
JPS57102045A JP17807380A JP17807380A JPS57102045A JP S57102045 A JPS57102045 A JP S57102045A JP 17807380 A JP17807380 A JP 17807380A JP 17807380 A JP17807380 A JP 17807380A JP S57102045 A JPS57102045 A JP S57102045A
Authority
JP
Japan
Prior art keywords
film
insulator
aperture
polycrystalline silicon
sputter etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17807380A
Other languages
Japanese (ja)
Other versions
JPH0330300B2 (en
Inventor
Takashi Yabu
Masao Kanazawa
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17807380A priority Critical patent/JPS57102045A/en
Publication of JPS57102045A publication Critical patent/JPS57102045A/en
Publication of JPH0330300B2 publication Critical patent/JPH0330300B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Abstract

PURPOSE:To grow an element isolation region flatly by a method wherein an aperture part to bury an insulator is dug in a substrate, and after the insulator is coated and is settled in the aperture part, a photo resist applied flatly on the insulator is removed by sputter etching. CONSTITUTION:An SiO2 film 2, a nitride film 3 and a polycrystalline silicon film 4 are formed on the silicon substrate 1. The aperture 5 to be buried is dug in the silicon substrate 1 making breadth thereof the about 1 micron. After the inside of the aperture 5 to be buried is oxidized thin by the thermal oxidation method to form an oxide film 6, the oxide film 7 is formed, and the photo resist 8 is applied thereon and sputter etching is performed. When the surface of the polycrystalline silicon film 4 is exposed in this condition, sputter etching is stopped. The polycrystalline silicon film 4 and the nitride film 3 and removed in succession, and the element isolation region is formed.
JP17807380A 1980-12-18 1980-12-18 Manufacture of semiconductor device Granted JPS57102045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17807380A JPS57102045A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17807380A JPS57102045A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57102045A true JPS57102045A (en) 1982-06-24
JPH0330300B2 JPH0330300B2 (en) 1991-04-26

Family

ID=16042139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17807380A Granted JPS57102045A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102045A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59215741A (en) * 1983-05-24 1984-12-05 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS59225543A (en) * 1983-06-06 1984-12-18 Mitsubishi Electric Corp Formation of inter-element isolation region
US5229316A (en) * 1992-04-16 1993-07-20 Micron Technology, Inc. Semiconductor processing method for forming substrate isolation trenches

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59215741A (en) * 1983-05-24 1984-12-05 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS59225543A (en) * 1983-06-06 1984-12-18 Mitsubishi Electric Corp Formation of inter-element isolation region
US5229316A (en) * 1992-04-16 1993-07-20 Micron Technology, Inc. Semiconductor processing method for forming substrate isolation trenches

Also Published As

Publication number Publication date
JPH0330300B2 (en) 1991-04-26

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