JPS56111243A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56111243A
JPS56111243A JP1331680A JP1331680A JPS56111243A JP S56111243 A JPS56111243 A JP S56111243A JP 1331680 A JP1331680 A JP 1331680A JP 1331680 A JP1331680 A JP 1331680A JP S56111243 A JPS56111243 A JP S56111243A
Authority
JP
Japan
Prior art keywords
oxidization
layer
substrate
film
implanting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1331680A
Other languages
Japanese (ja)
Inventor
Akira Kurosawa
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1331680A priority Critical patent/JPS56111243A/en
Publication of JPS56111243A publication Critical patent/JPS56111243A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To accelerate the oxidization speed in the direction of a substrate thickness, to prevent a bird peak from taking place and to prevent the rediffusion of an inversion preventing layer, by implanting O2 ions preliminerily into the portion where a field oxidized film is to be formed on an Si substrate. CONSTITUTION:An Si3N4 film 13 is formed on an SiO2 film 12 on a P<-> type substrate. Then with a resist-mask 14 coated it is etched so that an Si3N4 mask 13' is formed. By implanting B ions a P<+> inversion layer is formed. Thereafter by implanting 0 ions a layer 16 is formed. After removing the resist mask 14, wet oxidization at a high temperature is performed. The oxidization proceeds from the layer 12 and 16, forming a field oxidized film 17. Then a semiconductor device is formed on the substrate in a region surrounded by the oxidized film 17. With such an arrangement, the oxidized film 17 suppress the oxidization in the lateral direction and grows thickly in a short period of time so that it prevents the bird peak and the rediffusion of the inversion preventing layer, resulting in the improved properties and the greater integration.
JP1331680A 1980-02-06 1980-02-06 Preparation of semiconductor device Pending JPS56111243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1331680A JPS56111243A (en) 1980-02-06 1980-02-06 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1331680A JPS56111243A (en) 1980-02-06 1980-02-06 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111243A true JPS56111243A (en) 1981-09-02

Family

ID=11829762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1331680A Pending JPS56111243A (en) 1980-02-06 1980-02-06 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111243A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510276A (en) * 1992-12-28 1996-04-23 Commissariat A L'energie Atomique Process for producing a pressure transducer using silicon-on-insulator technology
US5712186A (en) * 1996-06-12 1998-01-27 Micron Technology, Inc. Method for growing field oxide to minimize birds' beak length
US5976952A (en) * 1997-03-05 1999-11-02 Advanced Micro Devices, Inc. Implanted isolation structure formation for high density CMOS integrated circuits
US6127242A (en) * 1994-02-10 2000-10-03 Micron Technology, Inc. Method for semiconductor device isolation using oxygen and nitrogen ion implantations to reduce lateral encroachment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510276A (en) * 1992-12-28 1996-04-23 Commissariat A L'energie Atomique Process for producing a pressure transducer using silicon-on-insulator technology
US6127242A (en) * 1994-02-10 2000-10-03 Micron Technology, Inc. Method for semiconductor device isolation using oxygen and nitrogen ion implantations to reduce lateral encroachment
US5712186A (en) * 1996-06-12 1998-01-27 Micron Technology, Inc. Method for growing field oxide to minimize birds' beak length
US6333243B1 (en) 1996-06-12 2001-12-25 Micron Technology, Inc. Method for growing field oxide to minimize birds' beak length
US5976952A (en) * 1997-03-05 1999-11-02 Advanced Micro Devices, Inc. Implanted isolation structure formation for high density CMOS integrated circuits

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