JPS5759348A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5759348A
JPS5759348A JP13371180A JP13371180A JPS5759348A JP S5759348 A JPS5759348 A JP S5759348A JP 13371180 A JP13371180 A JP 13371180A JP 13371180 A JP13371180 A JP 13371180A JP S5759348 A JPS5759348 A JP S5759348A
Authority
JP
Japan
Prior art keywords
film
mask
silicon
polycrystal silicon
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13371180A
Other languages
Japanese (ja)
Inventor
Akira Kurosawa
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13371180A priority Critical patent/JPS5759348A/en
Publication of JPS5759348A publication Critical patent/JPS5759348A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To integrate a minute element to high density without lowering the characteristics of the element by combining an element separation method and a selective oxidation method. CONSTITUTION:An oxide silicon film 2, a polycrystal silicon film 3 and a silicon nitride film 4 are formed successively on a P type silicn substrate 1, a silicon nitride film 4' is shaped through etching while using a resist film 5 as a mask, ions are injected and an inversion preventive layer 6 is formed. An oxide film 7 is shaped on the surface of the polycrystal silicon 3 while employing the nitride film 4' as a mask. The nitride film 4' and the polycrystal silicon film 3 on an element forming region are removed through etching while using the oxide film 7 as a mask, the oxide film 2 is removed through etching while employing remaining polycrystal silicon 8 as a mask, and the element is formed on an exposed surface of the substrate. A clearance 9 can be adjusted by controlling the length of a bird beak generated when oxidizing the polycrystal silicon 3.
JP13371180A 1980-09-27 1980-09-27 Manufacture of semiconductor device Pending JPS5759348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13371180A JPS5759348A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13371180A JPS5759348A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5759348A true JPS5759348A (en) 1982-04-09

Family

ID=15111101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13371180A Pending JPS5759348A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759348A (en)

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