JPS57155769A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57155769A
JPS57155769A JP56041323A JP4132381A JPS57155769A JP S57155769 A JPS57155769 A JP S57155769A JP 56041323 A JP56041323 A JP 56041323A JP 4132381 A JP4132381 A JP 4132381A JP S57155769 A JPS57155769 A JP S57155769A
Authority
JP
Japan
Prior art keywords
region
oxide film
film
ion implantation
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56041323A
Other languages
Japanese (ja)
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56041323A priority Critical patent/JPS57155769A/en
Publication of JPS57155769A publication Critical patent/JPS57155769A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To form a high pressure-resistant MOS IC on a shallow impurity diffused layer by a method wherein a channel cut region is isolated from a diffused region, and a gate oxide film is formed by two times of growth of SiO2 to increase masking processes by one step for the formation of a diffused layer. CONSTITUTION:The SiO2 film 23 is formed on a p type Si substrate 1 with a pattern consisting of Si3N4 film 24 mounted implantation thereon, and the p<+> channel cut region 2 is formed by B ion implantation with resist film 25 as a mask. Next, the p<++> channel cut region 3 is formed by another B<+> ion implantation with the resist film 25 as a mask. Thereafter, a field oxide film 4 is formed by selective oxidation method. Irepresents for a low pressure-resistant element forming region; II represents for a high pressure-resistant element forming region. Next, the whole surface is oxidized further to form the thin gate oxide film 5 and thick gate oxide film 6 by another oxidation on the whole surface after the removal of the oxide film on the regionI. For the rest, an n<+> region 11 and n<-> region 8 are formed by ion implantation by means of the resist film 9.
JP56041323A 1981-03-20 1981-03-20 Manufacture of semiconductor device Pending JPS57155769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041323A JPS57155769A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041323A JPS57155769A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57155769A true JPS57155769A (en) 1982-09-25

Family

ID=12605308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041323A Pending JPS57155769A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155769A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218164A (en) * 1985-03-25 1986-09-27 Hitachi Ltd Semiconductor integrated circuit device
JPS6219757U (en) * 1985-07-19 1987-02-05
JPH01120033A (en) * 1987-11-02 1989-05-12 Hitachi Ltd Semiconductor device
DE3915728A1 (en) * 1988-09-08 1990-03-22 Nt Inc CUTTING KNIFE
US5016077A (en) * 1985-08-26 1991-05-14 Kabushiki Kaisha Toshiba Insulated gate type semiconductor device and method of manufacturing the same
EP0545074A2 (en) * 1991-11-29 1993-06-09 STMicroelectronics S.r.l. Method for producing electrically erasable and programmable read-only memory cells with a single polysilicon level
US5338693A (en) * 1987-01-08 1994-08-16 International Rectifier Corporation Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
US5831318A (en) * 1996-07-25 1998-11-03 International Rectifier Corporation Radhard mosfet with thick gate oxide and deep channel region

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218164A (en) * 1985-03-25 1986-09-27 Hitachi Ltd Semiconductor integrated circuit device
JPS6219757U (en) * 1985-07-19 1987-02-05
US5016077A (en) * 1985-08-26 1991-05-14 Kabushiki Kaisha Toshiba Insulated gate type semiconductor device and method of manufacturing the same
US5338693A (en) * 1987-01-08 1994-08-16 International Rectifier Corporation Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
JPH01120033A (en) * 1987-11-02 1989-05-12 Hitachi Ltd Semiconductor device
DE3915728A1 (en) * 1988-09-08 1990-03-22 Nt Inc CUTTING KNIFE
EP0545074A2 (en) * 1991-11-29 1993-06-09 STMicroelectronics S.r.l. Method for producing electrically erasable and programmable read-only memory cells with a single polysilicon level
US5367483A (en) * 1991-11-29 1994-11-22 Sgs-Thomson Microelectronics S.R.L. Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same
US5553017A (en) * 1991-11-29 1996-09-03 Sgs-Thomson Microelectronics S.R.L. Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same
US5831318A (en) * 1996-07-25 1998-11-03 International Rectifier Corporation Radhard mosfet with thick gate oxide and deep channel region

Similar Documents

Publication Publication Date Title
JPS57155769A (en) Manufacture of semiconductor device
JPS5643756A (en) Manufacture of semiconductor device
JPS5726467A (en) Manufacture of semiconductor device
JPS5661139A (en) Manufacture of semiconductor device
JPS5483778A (en) Mos semiconductor device and its manufacture
JPS5458381A (en) Manufacture for semiconductor device
JPS56150856A (en) Manufacture of semiconductor device
JPS56111241A (en) Preparation of semiconductor device
JPS5660015A (en) Manufacture of semiconductor device
JPS56126957A (en) Manufacture of semiconductor device
JPS5759319A (en) Manufacture of semiconductor device
JPS5753957A (en) Manufacture of semiconductor device
JPS55146977A (en) Manufacture of complementary type mis semiconductor device
JPS5691476A (en) Semiconductor
JPS6453455A (en) Manufacture of semiconductor device
JPS5759348A (en) Manufacture of semiconductor device
JPS647566A (en) Manufacture of thin film transistor
JPS5710949A (en) Manufacture of semiconductor device
JPS6430257A (en) Manufacture of semiconductor device
JPS57181137A (en) Manufacture of semiconductor device
JPS54134980A (en) Manufacture of semiconductor device
JPS5656628A (en) Manufacture of semiconductor device
JPS6484662A (en) Manufacture of semiconductor device
JPS6424460A (en) Manufacture of semiconductor device
JPS5710246A (en) Manufacture of semiconductor device