JPS6430257A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6430257A JPS6430257A JP62187199A JP18719987A JPS6430257A JP S6430257 A JPS6430257 A JP S6430257A JP 62187199 A JP62187199 A JP 62187199A JP 18719987 A JP18719987 A JP 18719987A JP S6430257 A JPS6430257 A JP S6430257A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- nitride film
- region
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To simplify a manufacturing process by a method wherein each ion- implantation region is determined through two masking processes for the element isolation and the formation of a well region. CONSTITUTION:A silicon dioxide film 2 and a silicon nitride film 3 are formed on an N-type silicon substrate 1, a part of the silicon nitride film 3 is removed which is to be an element isolation region, and then a silicon nitride film 4 is deposited thereon. A photoresist film 5 is formed which has an opening provided for a P well forming region, the silicon nitride film 4 and the silicon dioxide film 2 are subjected to etching through the photoresist film 5 used as a mask, the ion-implantation of boron is performed, and then the photoresist 5 is removed, the implanted boron is driven in for the formation of a P well 6, and thereafter a silicon dioxide film 8a and a diffusion layer 7 are formed through the selective oxidation. The silicon nitride film 4 is removed, the silicon nitride film 3 is patially removed, P<+> ions are implanted through the film 3 left unremoved as a mask, a channel stopper on the P channel side is formed, and then oxidation is partially performed for the formation of an isolation region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187199A JPS6430257A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187199A JPS6430257A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6430257A true JPS6430257A (en) | 1989-02-01 |
Family
ID=16201828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62187199A Pending JPS6430257A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6430257A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168254A (en) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-07-27 JP JP62187199A patent/JPS6430257A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168254A (en) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
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