JPS6484659A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve a device in yield by a method wherein an insulating film is deposited on the whole face and then one of plural MOS transistor forming regions are covered with a resist film and the other is subjected to etching for the formation of a side wall of a gate electrode, and the former region is processed in the same manner as the latter region. CONSTITUTION:A p-type well 3, an element isolating insulation film 2, a channel doped layer 4, a gate oxide film 5, a gate electrode 6, and a low concentrated n-type layer 8 are formed on an n-type Si substrate 1, and then a resist 7 is removed for the formation of an oxide film 9 on the whole face. Then, a p channel MOS transistor (hereinafter referred to as 'p-MOSTr') side is covered with a photoresist 7a, and only an n-MOSTr side is subjected to etching for forming a side wall 9 and an n-type layer 10 in succession. Next, the resist 7a is removed, an oxide film 9a is deposited on the whole face, then the n- MOSTr side is covered with a photoresist 7b, and only the p-MOSTr side is subjected to etching for the formation of a side wall 9b and a p-type layer 11 in succession. Thereafter, the resist 7b is removed and then an Al wiring or the like is accomplished.