JPS54142981A - Manufacture of insulation gate type semiconductor device - Google Patents

Manufacture of insulation gate type semiconductor device

Info

Publication number
JPS54142981A
JPS54142981A JP5155878A JP5155878A JPS54142981A JP S54142981 A JPS54142981 A JP S54142981A JP 5155878 A JP5155878 A JP 5155878A JP 5155878 A JP5155878 A JP 5155878A JP S54142981 A JPS54142981 A JP S54142981A
Authority
JP
Japan
Prior art keywords
gate
film
films
bonded
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5155878A
Other versions
JPS6148792B2 (en
Inventor
Takeya Ezaki
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP5155878A priority Critical patent/JPS6148792B2/ja
Publication of JPS54142981A publication Critical patent/JPS54142981A/en
Publication of JPS6148792B2 publication Critical patent/JPS6148792B2/ja
Application status is Expired legal-status Critical

Links

Abstract

PURPOSE: To obtain a high-performance MOS type semiconductor device by evading the lowering of gate dielectric strength, by forming an insulation film covering both the flanks of a gate by self-matching.
CONSTITUTION: At both the edges of P-type Si substrate 1, thick SiO2 films 2 for separation are formed, thin gate SiO2 films 3 are formed on substrate 1 surrounded with films 2, and gate 4 of Mo or polycystalline Si is bonded to the center surface of film 3. Next, this is used as a mask to form N-type source and drain regions 5 and 6 in substrate 1 by diffusion and film 3 is removed by etching except undercut film 3' right under gate 4 by etching. After SiO2 film 7 is bonded to the entire surface, etching gas is blown off perpendicularly to the surface to remove films on regions 5 and 6 except film 7a self-matched with each flank 4a of gate 4. Next, insulation film 8 is grown on the entire surface and openings 9 to 11 are made, where Al source, gate and drain electrodes 12 to 14 are bonded.
COPYRIGHT: (C)1979,JPO&Japio
JP5155878A 1978-04-27 1978-04-27 Expired JPS6148792B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5155878A JPS6148792B2 (en) 1978-04-27 1978-04-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5155878A JPS6148792B2 (en) 1978-04-27 1978-04-27

Publications (2)

Publication Number Publication Date
JPS54142981A true JPS54142981A (en) 1979-11-07
JPS6148792B2 JPS6148792B2 (en) 1986-10-25

Family

ID=12890312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5155878A Expired JPS6148792B2 (en) 1978-04-27 1978-04-27

Country Status (1)

Country Link
JP (1) JPS6148792B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577945A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device
JPS5737855A (en) * 1980-08-19 1982-03-02 Nec Corp Semiconductor device
JPS57157543A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS57193045A (en) * 1981-05-23 1982-11-27 Nippon Telegr & Teleph Corp <Ntt> Integrated circuit device and manufacture thereof
JPS57202757A (en) * 1981-06-09 1982-12-11 Nec Corp Semiconductor device and manufacture thereof
JPS5821845A (en) * 1981-07-31 1983-02-08 Nec Corp Semiconductor device
JPS5966149A (en) * 1982-10-08 1984-04-14 Toshiba Corp Manufacture of semiconductor device
JPS59117237A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61198653A (en) * 1985-11-15 1986-09-03 Nec Corp Manufacture of semiconductor device
JPS646052U (en) * 1987-06-30 1989-01-13

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577945A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device
JPS6146054B2 (en) * 1980-06-18 1986-10-11 Fujitsu Ltd
JPS5737855A (en) * 1980-08-19 1982-03-02 Nec Corp Semiconductor device
JPS57157543A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPH035656B2 (en) * 1981-03-25 1991-01-28 Tokyo Shibaura Electric Co
JPS57193045A (en) * 1981-05-23 1982-11-27 Nippon Telegr & Teleph Corp <Ntt> Integrated circuit device and manufacture thereof
JPS639747B2 (en) * 1981-06-09 1988-03-01 Nippon Electric Co
JPS57202757A (en) * 1981-06-09 1982-12-11 Nec Corp Semiconductor device and manufacture thereof
JPS6244854B2 (en) * 1981-07-31 1987-09-22 Nippon Electric Co
JPS5821845A (en) * 1981-07-31 1983-02-08 Nec Corp Semiconductor device
JPS5966149A (en) * 1982-10-08 1984-04-14 Toshiba Corp Manufacture of semiconductor device
JPS6366425B2 (en) * 1982-10-08 1988-12-20 Tokyo Shibaura Electric Co
JPS59117237A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH025297B2 (en) * 1985-11-15 1990-02-01 Nippon Electric Co
JPS61198653A (en) * 1985-11-15 1986-09-03 Nec Corp Manufacture of semiconductor device
JPS646052U (en) * 1987-06-30 1989-01-13

Also Published As

Publication number Publication date
JPS6148792B2 (en) 1986-10-25

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