JPS5736842A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5736842A
JPS5736842A JP11171080A JP11171080A JPS5736842A JP S5736842 A JPS5736842 A JP S5736842A JP 11171080 A JP11171080 A JP 11171080A JP 11171080 A JP11171080 A JP 11171080A JP S5736842 A JPS5736842 A JP S5736842A
Authority
JP
Japan
Prior art keywords
film
substrate
self
type
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11171080A
Other languages
Japanese (ja)
Inventor
Shinichiro Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11171080A priority Critical patent/JPS5736842A/en
Publication of JPS5736842A publication Critical patent/JPS5736842A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Abstract

PURPOSE:To obtain an IC having high Vth of a field and high integration by self- aligning an impurity dope of the field. CONSTITUTION:An SiO2 film 16 injected with As ions, a doped polysilicon layer 10, and a CVD SiO2 film 20 are sequentially formed on an N type Si substrate 11, and a part corresponding to an active region is selectively etched and removed to form holes 21, 22. Then, a gate oxidized film 16a is formed on a substrate 11 by an oxidation, on oxidized film is formed on the side surface of the layer 10, and As ion in the film 16 is simultaneously diffused in the substrate 11 to form a high density N<+> type region 17 in a self-aligning manner. Thereafter, a polysilicon gate 19, P type source regions 18a, 18b and drain regions 28a, 28b are formed by an ordinary process, thereby forming an MOSIC. In this manner, a semiconductor IC advantageous for the microminiaturization and high integration can be formed.
JP11171080A 1980-08-15 1980-08-15 Semiconductor integrated circuit device Pending JPS5736842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11171080A JPS5736842A (en) 1980-08-15 1980-08-15 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11171080A JPS5736842A (en) 1980-08-15 1980-08-15 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5736842A true JPS5736842A (en) 1982-02-27

Family

ID=14568190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171080A Pending JPS5736842A (en) 1980-08-15 1980-08-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5736842A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169163A (en) * 1984-02-13 1985-09-02 Hitachi Ltd Semiconductor device
JPS6248041A (en) * 1985-08-28 1987-03-02 Nec Corp Semiconductor integrated circuit device
JPS63117460A (en) * 1986-11-05 1988-05-21 Nec Corp Manufacture of semiconductor integrated circuit device
JPH01235347A (en) * 1988-03-16 1989-09-20 Agency Of Ind Science & Technol Compound semiconductor integrated circuit
JPH0294455A (en) * 1988-09-29 1990-04-05 Mitsubishi Electric Corp Semiconductor device
JPH02216848A (en) * 1989-02-16 1990-08-29 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH03203352A (en) * 1989-12-29 1991-09-05 Nec Corp Semiconductor device
US5440161A (en) * 1993-07-27 1995-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an SOI structure and a manufacturing method thereof
JPH08316426A (en) * 1995-05-16 1996-11-29 Nittetsu Semiconductor Kk Mos semiconductor device and its manufacture
US6323527B1 (en) 1997-06-24 2001-11-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4992985A (en) * 1973-01-09 1974-09-04
JPS51126083A (en) * 1975-04-25 1976-11-02 Hitachi Ltd Manufacturing method of semi-conductor equpment
JPS5299086A (en) * 1976-02-17 1977-08-19 Tokyo Shibaura Electric Co Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4992985A (en) * 1973-01-09 1974-09-04
JPS51126083A (en) * 1975-04-25 1976-11-02 Hitachi Ltd Manufacturing method of semi-conductor equpment
JPS5299086A (en) * 1976-02-17 1977-08-19 Tokyo Shibaura Electric Co Production of semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169163A (en) * 1984-02-13 1985-09-02 Hitachi Ltd Semiconductor device
JPS6248041A (en) * 1985-08-28 1987-03-02 Nec Corp Semiconductor integrated circuit device
JPS63117460A (en) * 1986-11-05 1988-05-21 Nec Corp Manufacture of semiconductor integrated circuit device
JPH01235347A (en) * 1988-03-16 1989-09-20 Agency Of Ind Science & Technol Compound semiconductor integrated circuit
JPH0294455A (en) * 1988-09-29 1990-04-05 Mitsubishi Electric Corp Semiconductor device
JPH02216848A (en) * 1989-02-16 1990-08-29 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH03203352A (en) * 1989-12-29 1991-09-05 Nec Corp Semiconductor device
US5440161A (en) * 1993-07-27 1995-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an SOI structure and a manufacturing method thereof
JPH08316426A (en) * 1995-05-16 1996-11-29 Nittetsu Semiconductor Kk Mos semiconductor device and its manufacture
US6153911A (en) * 1995-05-16 2000-11-28 Nippon Steel Semiconductor Corp. Metal oxide semiconductor device and method manufacturing the same
US6323527B1 (en) 1997-06-24 2001-11-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US6479330B2 (en) 1997-06-24 2002-11-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

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