JPS5548950A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5548950A JPS5548950A JP12119278A JP12119278A JPS5548950A JP S5548950 A JPS5548950 A JP S5548950A JP 12119278 A JP12119278 A JP 12119278A JP 12119278 A JP12119278 A JP 12119278A JP S5548950 A JPS5548950 A JP S5548950A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- diffusion hole
- wafer
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make source diffusion hole and gate diffusion hole patterns fine and uniform, by operating on a flat wafer all processes required for accurate patternings.
CONSTITUTION: Buffer oxide film 12 and Si3N4 film 13, which is No.1 insulating film, are laminated on n-type epitaxial wafer 11, and by etching this, a pattern consisting of film 12 and films 13aW13b is formed. Next, by operating heat treatment in wet oxygen, the exposed surface of wafer 11 is changed into oxide film 17. The entire surface, including thin film 17' on films 13aW13b produced at this time, is coated with Si3N4 film, which becomes No.2 insulating film. Subsequently, film 18 is plasma-etched, and by using this as mask and operating heat treatment in steam, field oxide film 14 is produced. Then, film 18 is removed by using phosphoric acid having slow etching speed, and by using film 17' as stopper, films 13aW 13b are retained. In this way, the desired diffusion hole is formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12119278A JPS5548950A (en) | 1978-10-03 | 1978-10-03 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12119278A JPS5548950A (en) | 1978-10-03 | 1978-10-03 | Manufacturing of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5548950A true JPS5548950A (en) | 1980-04-08 |
Family
ID=14805129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12119278A Pending JPS5548950A (en) | 1978-10-03 | 1978-10-03 | Manufacturing of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5548950A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827360A (en) * | 1981-07-24 | 1983-02-18 | インテル・コ−ポレ−シヨン | Method of producing metal-oxide film- semiconductor memory |
JPS5844748A (en) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1978
- 1978-10-03 JP JP12119278A patent/JPS5548950A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827360A (en) * | 1981-07-24 | 1983-02-18 | インテル・コ−ポレ−シヨン | Method of producing metal-oxide film- semiconductor memory |
JPS5844748A (en) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0117256B2 (en) * | 1981-09-10 | 1989-03-29 | Fujitsu Ltd |
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