JPS5548950A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5548950A
JPS5548950A JP12119278A JP12119278A JPS5548950A JP S5548950 A JPS5548950 A JP S5548950A JP 12119278 A JP12119278 A JP 12119278A JP 12119278 A JP12119278 A JP 12119278A JP S5548950 A JPS5548950 A JP S5548950A
Authority
JP
Japan
Prior art keywords
film
films
diffusion hole
wafer
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12119278A
Other languages
Japanese (ja)
Inventor
Hisao Kamo
Yuji Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12119278A priority Critical patent/JPS5548950A/en
Publication of JPS5548950A publication Critical patent/JPS5548950A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make source diffusion hole and gate diffusion hole patterns fine and uniform, by operating on a flat wafer all processes required for accurate patternings.
CONSTITUTION: Buffer oxide film 12 and Si3N4 film 13, which is No.1 insulating film, are laminated on n-type epitaxial wafer 11, and by etching this, a pattern consisting of film 12 and films 13aW13b is formed. Next, by operating heat treatment in wet oxygen, the exposed surface of wafer 11 is changed into oxide film 17. The entire surface, including thin film 17' on films 13aW13b produced at this time, is coated with Si3N4 film, which becomes No.2 insulating film. Subsequently, film 18 is plasma-etched, and by using this as mask and operating heat treatment in steam, field oxide film 14 is produced. Then, film 18 is removed by using phosphoric acid having slow etching speed, and by using film 17' as stopper, films 13aW 13b are retained. In this way, the desired diffusion hole is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP12119278A 1978-10-03 1978-10-03 Manufacturing of semiconductor device Pending JPS5548950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12119278A JPS5548950A (en) 1978-10-03 1978-10-03 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12119278A JPS5548950A (en) 1978-10-03 1978-10-03 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5548950A true JPS5548950A (en) 1980-04-08

Family

ID=14805129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12119278A Pending JPS5548950A (en) 1978-10-03 1978-10-03 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5548950A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827360A (en) * 1981-07-24 1983-02-18 インテル・コ−ポレ−シヨン Method of producing metal-oxide film- semiconductor memory
JPS5844748A (en) * 1981-09-10 1983-03-15 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827360A (en) * 1981-07-24 1983-02-18 インテル・コ−ポレ−シヨン Method of producing metal-oxide film- semiconductor memory
JPS5844748A (en) * 1981-09-10 1983-03-15 Fujitsu Ltd Manufacture of semiconductor device
JPH0117256B2 (en) * 1981-09-10 1989-03-29 Fujitsu Ltd

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