JPS54124687A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54124687A
JPS54124687A JP3269178A JP3269178A JPS54124687A JP S54124687 A JPS54124687 A JP S54124687A JP 3269178 A JP3269178 A JP 3269178A JP 3269178 A JP3269178 A JP 3269178A JP S54124687 A JPS54124687 A JP S54124687A
Authority
JP
Japan
Prior art keywords
film
poly crystal
crystal layer
mask
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3269178A
Other languages
Japanese (ja)
Inventor
Tadatoshi Nozaki
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3269178A priority Critical patent/JPS54124687A/en
Publication of JPS54124687A publication Critical patent/JPS54124687A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form easily a shallow junction by leaving a poly crystal layer, which is removed after, in both sides of the electrode and forming the source.drain region by ion injection when the poly crystal Si gate electrode is provided through a gate oxide film on a semiconductor substrate.
CONSTITUTION: Thick field SiO2 film 2 is caused to adhere onto Si substrate 1, and film 2 on a prescrived region is cut off, and thin gate SiO2 film 3 is formed there, and a poly crystal Si layer is grown on this film 3. Next, when mask 5 is provided on the center surface of the poly crystal layer for the purpose of forming the gate electrode and is etched to form gate electrode 4, all of the exposed poly crystal layer is not removed, and a prescribed thickness of this layer is left. After that, As ions are injected through this left poly crystal layer and film 3 to form source.drain region 6 in both sides of electrode 4. Next, the distribution of As is made uniform by annealing in N2 gas, and mask 5 is used to remove the left poly crystal layer by etching, and next, mask 5 is removed.
COPYRIGHT: (C)1979,JPO&Japio
JP3269178A 1978-03-20 1978-03-20 Production of semiconductor device Pending JPS54124687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3269178A JPS54124687A (en) 1978-03-20 1978-03-20 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3269178A JPS54124687A (en) 1978-03-20 1978-03-20 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54124687A true JPS54124687A (en) 1979-09-27

Family

ID=12365875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3269178A Pending JPS54124687A (en) 1978-03-20 1978-03-20 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54124687A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775463A (en) * 1980-10-28 1982-05-12 Nec Corp Manufacture of semiconductor device
JPS57100768A (en) * 1980-12-16 1982-06-23 Nec Corp Manufacture of field effect semiconductor device
JPS6340375A (en) * 1986-04-23 1988-02-20 Nec Corp Manufacture of mis field-effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112187A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112187A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775463A (en) * 1980-10-28 1982-05-12 Nec Corp Manufacture of semiconductor device
JPH033388B2 (en) * 1980-10-28 1991-01-18 Nippon Electric Co
JPS57100768A (en) * 1980-12-16 1982-06-23 Nec Corp Manufacture of field effect semiconductor device
JPS6340375A (en) * 1986-04-23 1988-02-20 Nec Corp Manufacture of mis field-effect transistor

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