JPS57180144A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57180144A
JPS57180144A JP6503081A JP6503081A JPS57180144A JP S57180144 A JPS57180144 A JP S57180144A JP 6503081 A JP6503081 A JP 6503081A JP 6503081 A JP6503081 A JP 6503081A JP S57180144 A JPS57180144 A JP S57180144A
Authority
JP
Japan
Prior art keywords
film
mask
films
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6503081A
Other languages
Japanese (ja)
Other versions
JPS6217867B2 (en
Inventor
Satoru Maeda
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6503081A priority Critical patent/JPS57180144A/en
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS57180144A publication Critical patent/JPS57180144A/en
Publication of JPS6217867B2 publication Critical patent/JPS6217867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Abstract

PURPOSE:To obtain minute element isolation regions of a semiconductor device by a method wherein an insulating film is adhered on a semiconductor substrate, the upper part of the element forming region is covered with a mask, inversion preventing layers are formed on both the sides of the mask performing ion implantation through the insulating film, and etching is performed surviving the insulating films thereon. CONSTITUTION:The thick SiO2 film 102 to act as the field insulating film afterward is made to be generated on the P type Si substrate 101, and the mask 103 of resist film is provided corresponding to the element forming region. Then boron ions are implanted in both the sides thereof through the film 102 using the resist film thereof as the mask to form the shallow P<+> type inversion preventing layers 104 in the substrate 101, an Al film is adhered on the whole surface, and the Al film 1051 on the mask 103 and the Al films 1052 on the film 102 are made to be in discontinuous condition. Then the mask 103 is removed together with the film 1051 thereon, etching is performed to remove the exposed part of the film 102, and the films 1052 are removed to make the field insulating films 106 consisting of the film 102 positioning on the layers 104 under the films 1052 are made to survive. Then the space between the films 106 thereof is buried with a P type Si layer 110 for formation of element.
JP6503081A 1980-10-02 1981-04-28 Manufacture of semiconductor device Granted JPS57180144A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6503081A JPS57180144A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor device
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6503081A JPS57180144A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180144A true JPS57180144A (en) 1982-11-06
JPS6217867B2 JPS6217867B2 (en) 1987-04-20

Family

ID=13275164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6503081A Granted JPS57180144A (en) 1980-10-02 1981-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180144A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02309648A (en) * 1989-05-24 1990-12-25 Seiko Instr Inc Manufacture of semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202231A (en) * 1988-02-08 1989-08-15 Toray Ind Inc Material for collecting water animals, small life-feeding place, and man-made gathering place for fish
JPH0649180Y2 (en) * 1988-03-10 1994-12-14 ライオン株式会社 Algae farming equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061189A (en) * 1973-09-28 1975-05-26
JPS5541715A (en) * 1978-09-19 1980-03-24 Oki Electric Ind Co Ltd Production of semiconductor device
JPS566444A (en) * 1979-06-28 1981-01-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061189A (en) * 1973-09-28 1975-05-26
JPS5541715A (en) * 1978-09-19 1980-03-24 Oki Electric Ind Co Ltd Production of semiconductor device
JPS566444A (en) * 1979-06-28 1981-01-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02309648A (en) * 1989-05-24 1990-12-25 Seiko Instr Inc Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6217867B2 (en) 1987-04-20

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