JPS5585068A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5585068A JPS5585068A JP15822178A JP15822178A JPS5585068A JP S5585068 A JPS5585068 A JP S5585068A JP 15822178 A JP15822178 A JP 15822178A JP 15822178 A JP15822178 A JP 15822178A JP S5585068 A JPS5585068 A JP S5585068A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- thermally oxidizing
- electrode
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To stabilize characteristics, and to lower noises, by a method wherein halogen ions are injected onto a surface of a silicon substrate, and an oxide film is formed by thermally oxidizing the surface.
CONSTITUTION: Source and drain regions 3s and 3d are made up facing to a surface of a substrate 1. A window 4 is bored by selectively removing an insulating layer 2 on a portion between both regions 3s and 3d by means of photoetching, and the ions of halogen elements, such as, F+, Cl+, etc. are injected beforehand onto the surface of the substrate 1 means of an ion injection method prior to the formation of a gate oxide film. The gate oxide film 5 is built up by thermally oxidizing the surface of the substrate 1, and a source electrode 6s, a drain electrode 6d and a gate electrode 6g are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15822178A JPS5585068A (en) | 1978-12-21 | 1978-12-21 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15822178A JPS5585068A (en) | 1978-12-21 | 1978-12-21 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585068A true JPS5585068A (en) | 1980-06-26 |
Family
ID=15666922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15822178A Pending JPS5585068A (en) | 1978-12-21 | 1978-12-21 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585068A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55166960A (en) * | 1979-06-14 | 1980-12-26 | Fujitsu Ltd | Manufacture of field effect semiconductor device |
JPS61164266A (en) * | 1985-01-16 | 1986-07-24 | Nec Corp | Semiconductor device with reinforced radiation resistance |
JPS635534A (en) * | 1986-06-25 | 1988-01-11 | Matsushita Electronics Corp | Manufacture of semiconductor device |
EP1052685A2 (en) * | 1999-05-14 | 2000-11-15 | Lucent Technologies Inc. | Integrated circuit device having a fluorine implanted oxide layer |
EP1052686A2 (en) * | 1999-05-14 | 2000-11-15 | Lucent Technologies Inc. | Oxidation of silicon using fluorine implants |
JP2013179359A (en) * | 2008-02-13 | 2013-09-09 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-12-21 JP JP15822178A patent/JPS5585068A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55166960A (en) * | 1979-06-14 | 1980-12-26 | Fujitsu Ltd | Manufacture of field effect semiconductor device |
JPH0338754B2 (en) * | 1979-06-14 | 1991-06-11 | Fujitsu Ltd | |
JPS61164266A (en) * | 1985-01-16 | 1986-07-24 | Nec Corp | Semiconductor device with reinforced radiation resistance |
JPS635534A (en) * | 1986-06-25 | 1988-01-11 | Matsushita Electronics Corp | Manufacture of semiconductor device |
EP1052685A2 (en) * | 1999-05-14 | 2000-11-15 | Lucent Technologies Inc. | Integrated circuit device having a fluorine implanted oxide layer |
EP1052686A2 (en) * | 1999-05-14 | 2000-11-15 | Lucent Technologies Inc. | Oxidation of silicon using fluorine implants |
EP1052686A3 (en) * | 1999-05-14 | 2001-09-19 | Lucent Technologies Inc. | Oxidation of silicon using fluorine implants |
EP1052685A3 (en) * | 1999-05-14 | 2001-11-07 | Lucent Technologies Inc. | Integrated circuit device having a fluorine implanted oxide layer |
US6358865B2 (en) * | 1999-05-14 | 2002-03-19 | Agere Systems Guardian Corp. | Oxidation of silicon using fluorine implant |
JP2013179359A (en) * | 2008-02-13 | 2013-09-09 | Toshiba Corp | Semiconductor device |
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