JPS5585068A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5585068A
JPS5585068A JP15822178A JP15822178A JPS5585068A JP S5585068 A JPS5585068 A JP S5585068A JP 15822178 A JP15822178 A JP 15822178A JP 15822178 A JP15822178 A JP 15822178A JP S5585068 A JPS5585068 A JP S5585068A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
thermally oxidizing
electrode
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15822178A
Other languages
Japanese (ja)
Inventor
Masamitsu Nakai
Atsuo Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP15822178A priority Critical patent/JPS5585068A/en
Publication of JPS5585068A publication Critical patent/JPS5585068A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To stabilize characteristics, and to lower noises, by a method wherein halogen ions are injected onto a surface of a silicon substrate, and an oxide film is formed by thermally oxidizing the surface.
CONSTITUTION: Source and drain regions 3s and 3d are made up facing to a surface of a substrate 1. A window 4 is bored by selectively removing an insulating layer 2 on a portion between both regions 3s and 3d by means of photoetching, and the ions of halogen elements, such as, F+, Cl+, etc. are injected beforehand onto the surface of the substrate 1 means of an ion injection method prior to the formation of a gate oxide film. The gate oxide film 5 is built up by thermally oxidizing the surface of the substrate 1, and a source electrode 6s, a drain electrode 6d and a gate electrode 6g are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP15822178A 1978-12-21 1978-12-21 Preparation of semiconductor device Pending JPS5585068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15822178A JPS5585068A (en) 1978-12-21 1978-12-21 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15822178A JPS5585068A (en) 1978-12-21 1978-12-21 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5585068A true JPS5585068A (en) 1980-06-26

Family

ID=15666922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15822178A Pending JPS5585068A (en) 1978-12-21 1978-12-21 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585068A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166960A (en) * 1979-06-14 1980-12-26 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS61164266A (en) * 1985-01-16 1986-07-24 Nec Corp Semiconductor device with reinforced radiation resistance
JPS635534A (en) * 1986-06-25 1988-01-11 Matsushita Electronics Corp Manufacture of semiconductor device
EP1052685A2 (en) * 1999-05-14 2000-11-15 Lucent Technologies Inc. Integrated circuit device having a fluorine implanted oxide layer
EP1052686A2 (en) * 1999-05-14 2000-11-15 Lucent Technologies Inc. Oxidation of silicon using fluorine implants
JP2013179359A (en) * 2008-02-13 2013-09-09 Toshiba Corp Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166960A (en) * 1979-06-14 1980-12-26 Fujitsu Ltd Manufacture of field effect semiconductor device
JPH0338754B2 (en) * 1979-06-14 1991-06-11 Fujitsu Ltd
JPS61164266A (en) * 1985-01-16 1986-07-24 Nec Corp Semiconductor device with reinforced radiation resistance
JPS635534A (en) * 1986-06-25 1988-01-11 Matsushita Electronics Corp Manufacture of semiconductor device
EP1052685A2 (en) * 1999-05-14 2000-11-15 Lucent Technologies Inc. Integrated circuit device having a fluorine implanted oxide layer
EP1052686A2 (en) * 1999-05-14 2000-11-15 Lucent Technologies Inc. Oxidation of silicon using fluorine implants
EP1052686A3 (en) * 1999-05-14 2001-09-19 Lucent Technologies Inc. Oxidation of silicon using fluorine implants
EP1052685A3 (en) * 1999-05-14 2001-11-07 Lucent Technologies Inc. Integrated circuit device having a fluorine implanted oxide layer
US6358865B2 (en) * 1999-05-14 2002-03-19 Agere Systems Guardian Corp. Oxidation of silicon using fluorine implant
JP2013179359A (en) * 2008-02-13 2013-09-09 Toshiba Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5736844A (en) Semiconductor device
JPS5696854A (en) Semiconductor memory device
JPS5585068A (en) Preparation of semiconductor device
JPS5650532A (en) Manufacture of semiconductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS5617039A (en) Semiconductor device
JPS6447076A (en) Manufacture of mos type thin film transistor
JPS5679472A (en) Preparing method of mos-type semiconductor device
JPS5730358A (en) Manufacture of semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS5783059A (en) Manufacture of mos type semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS5552262A (en) Mos semiconductor device
JPS54161889A (en) Insulated gate type field effect transistor
JPS6126234B2 (en)
JPS5538019A (en) Manufacturing of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5591873A (en) Manufacture of semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5739579A (en) Mos semiconductor device and manufacture thereof
GB2004694A (en) Methods of manufacturing semiconductor devices
JPS54129983A (en) Manufacture of semiconductor device
JPS5587482A (en) Mis type semiconductor device
JPS5448178A (en) Manufacture of mos semiconductor device
JPS5797663A (en) Complementary mos type semiconductor