JPS5797663A - Complementary mos type semiconductor - Google Patents
Complementary mos type semiconductorInfo
- Publication number
- JPS5797663A JPS5797663A JP55175159A JP17515980A JPS5797663A JP S5797663 A JPS5797663 A JP S5797663A JP 55175159 A JP55175159 A JP 55175159A JP 17515980 A JP17515980 A JP 17515980A JP S5797663 A JPS5797663 A JP S5797663A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- layers
- drain
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the size of an element by insulating the bottom and side of both drain layers from a substrate body and a well region providing both of FET drains of COMSFET close to the boundary of a substrate and the well region. CONSTITUTION:A p well regin 2 is formed in an n type silicon substrate 1 and a field oxide layer 5 is formed by oxiding it to a certain depth except for the region for forming elements. Oxygen is ion-implanted at a certain depth of regions for forming a source and a drain using a mask, and a buried oxide film 10 is formed by heat treatment. A p<+> layers 13a, 13b and an n<+> layers 14a, 14b are formed. The bottom of the source and the drain layer is insulated by the oxide film 10 and the side is by the oxide layer 5 each from the body 1 and the region 2, making it unnecessary to provide a space for the p<+> layer 13b and the n<+> layer 14a against the body 1 and the region 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175159A JPS5797663A (en) | 1980-12-11 | 1980-12-11 | Complementary mos type semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175159A JPS5797663A (en) | 1980-12-11 | 1980-12-11 | Complementary mos type semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5797663A true JPS5797663A (en) | 1982-06-17 |
Family
ID=15991287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55175159A Pending JPS5797663A (en) | 1980-12-11 | 1980-12-11 | Complementary mos type semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5797663A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3050321A1 (en) * | 2016-04-15 | 2017-10-20 | St Microelectronics Tours Sas | DIODE STRUCTURE |
CN107302019A (en) * | 2016-04-15 | 2017-10-27 | 意法半导体(图尔)公司 | Vertical semiconductor structure |
-
1980
- 1980-12-11 JP JP55175159A patent/JPS5797663A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3050321A1 (en) * | 2016-04-15 | 2017-10-20 | St Microelectronics Tours Sas | DIODE STRUCTURE |
CN107302019A (en) * | 2016-04-15 | 2017-10-27 | 意法半导体(图尔)公司 | Vertical semiconductor structure |
EP3261129A1 (en) * | 2016-04-15 | 2017-12-27 | STMicroelectronics (Tours) SAS | Diode structure |
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