JPS56150867A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56150867A
JPS56150867A JP5481080A JP5481080A JPS56150867A JP S56150867 A JPS56150867 A JP S56150867A JP 5481080 A JP5481080 A JP 5481080A JP 5481080 A JP5481080 A JP 5481080A JP S56150867 A JPS56150867 A JP S56150867A
Authority
JP
Japan
Prior art keywords
fet
type
film
gate
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5481080A
Other languages
Japanese (ja)
Inventor
Toshihiko Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP5481080A priority Critical patent/JPS56150867A/en
Publication of JPS56150867A publication Critical patent/JPS56150867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Abstract

PURPOSE:To increase the integration of a semiconductor device by effectively utilizing a field part of the field insulating film of the device made of an Si gate type FET by forming an FET composed of polysilicon in source and drain regions as well as in a channel region on the field insulating film. CONSTITUTION:In order to form channel preventive layers 120, 121 at a P type well periphery, for example, in a C-MOS IC, a field insulating film 103 is formed widely. An N type polysilicon film 106 is, for example, formed on the film 103 in the stage in which an Si gate 105 is formed. Thereafter, P<+> type layes 107a, 107b are selectively formed also on the polysilicon film in the stage in which an impurity is introduced to the source and drain regions of a P type channel FET. Then, a gate film is formed on the region 107a, and electrodes for the source, the drain and the gate are formed at the time of forming aluminum electrodes 114, thereby forming an FET made of polysilicon. Since the area can be thus effectively utilized, the FET can be highly integrated, and the degree of freedom of the circuit configuration can also be increased.
JP5481080A 1980-04-24 1980-04-24 Semiconductor device Pending JPS56150867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5481080A JPS56150867A (en) 1980-04-24 1980-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5481080A JPS56150867A (en) 1980-04-24 1980-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56150867A true JPS56150867A (en) 1981-11-21

Family

ID=12981065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5481080A Pending JPS56150867A (en) 1980-04-24 1980-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56150867A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799097A (en) * 1987-07-29 1989-01-17 Ncr Corporation CMOS integrated devices in seeded islands
US8916986B2 (en) 2011-09-21 2014-12-23 Alstom Renewable Technologies Impulse air turbine arrangement for use with a reversing bi-directional air flow in a wave power plant

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214381A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Mis-type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214381A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Mis-type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799097A (en) * 1987-07-29 1989-01-17 Ncr Corporation CMOS integrated devices in seeded islands
US8916986B2 (en) 2011-09-21 2014-12-23 Alstom Renewable Technologies Impulse air turbine arrangement for use with a reversing bi-directional air flow in a wave power plant

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