JPS5448179A - Mis-type semiconductor integrated circuit device - Google Patents

Mis-type semiconductor integrated circuit device

Info

Publication number
JPS5448179A
JPS5448179A JP11458777A JP11458777A JPS5448179A JP S5448179 A JPS5448179 A JP S5448179A JP 11458777 A JP11458777 A JP 11458777A JP 11458777 A JP11458777 A JP 11458777A JP S5448179 A JPS5448179 A JP S5448179A
Authority
JP
Japan
Prior art keywords
channel length
mosfet
threshold voltage
channel
featuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11458777A
Other languages
Japanese (ja)
Inventor
Fumio Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11458777A priority Critical patent/JPS5448179A/en
Publication of JPS5448179A publication Critical patent/JPS5448179A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make the output voltage approximate to power voltage VDD level and then to increase the charging velocity to the load side, by lowering the threshold voltage of MISFET featuring a long channel length and then using the FET for the load MISFET.
CONSTITUTION: The threshold voltage is varied by adding the impurity only to the channel of one side (the shorter channel in this case). In this manufacturing method, gate insulating film 2 is formed on the surface of semiconductor substrate 1, and then gate electrode 3 is formed for MOSFET featuring a long channel length. Then threshold voltage adjusting impurity 4 is added to the surface of substrate 1 using electrode 3 as the mask. Gate electrode 5 is formed for MOSFET featuring a short channel length, and diffusion layer 6 forming the source and the drain is formed using electrode 3 and 5 as the mask is formed. As a result, the channel dose quantity of the longer channel length MOSFET becomes less than that of the shorter channel length MOSFET. Thus, the threshold voltage lowers even though the channel length is short
COPYRIGHT: (C)1979,JPO&Japio
JP11458777A 1977-09-26 1977-09-26 Mis-type semiconductor integrated circuit device Pending JPS5448179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11458777A JPS5448179A (en) 1977-09-26 1977-09-26 Mis-type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11458777A JPS5448179A (en) 1977-09-26 1977-09-26 Mis-type semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5448179A true JPS5448179A (en) 1979-04-16

Family

ID=14641577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11458777A Pending JPS5448179A (en) 1977-09-26 1977-09-26 Mis-type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5448179A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102272A (en) * 1979-01-31 1980-08-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating mos semiconductor device
JPS5671975A (en) * 1979-11-16 1981-06-15 Matsushita Electric Ind Co Ltd Mos type semiconductor system
JPS5717175A (en) * 1980-07-05 1982-01-28 Fujitsu Ltd Semiconductor integrated circuit
JPS63110665A (en) * 1986-10-27 1988-05-16 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH02153574A (en) * 1989-05-24 1990-06-13 Hitachi Ltd Manufacture of semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102272A (en) * 1979-01-31 1980-08-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating mos semiconductor device
JPS5671975A (en) * 1979-11-16 1981-06-15 Matsushita Electric Ind Co Ltd Mos type semiconductor system
JPS5717175A (en) * 1980-07-05 1982-01-28 Fujitsu Ltd Semiconductor integrated circuit
JPS63110665A (en) * 1986-10-27 1988-05-16 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH02153574A (en) * 1989-05-24 1990-06-13 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPH0449270B2 (en) * 1989-05-24 1992-08-11 Hitachi Ltd

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