JPS56165359A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56165359A
JPS56165359A JP6929080A JP6929080A JPS56165359A JP S56165359 A JPS56165359 A JP S56165359A JP 6929080 A JP6929080 A JP 6929080A JP 6929080 A JP6929080 A JP 6929080A JP S56165359 A JPS56165359 A JP S56165359A
Authority
JP
Japan
Prior art keywords
gate electrode
silicon substrate
type silicon
semiconductor
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6929080A
Other languages
Japanese (ja)
Inventor
Yasuo Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6929080A priority Critical patent/JPS56165359A/en
Publication of JPS56165359A publication Critical patent/JPS56165359A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To realize a high-speed by forming a gate electrode of an N channel MOSFET by a conductor or a semiconductor having a work function of a fixed value or lower. CONSTITUTION:N type diffusion layers 2, 3 functioning as a source or a drain are formed on a P type silicon substrate 1, and a gate electrode 5 is formed on the surface of the P type silicon substrate 1 between the N type diffusion layer 2, 3 through an oxide film 4. A depletion region 6 is formed in the P type silicon substrate 1. The gate electrode 5 is formed by a conductor or a semiconductor, wherein a work function thereof is smaller than 4.01eV.
JP6929080A 1980-05-23 1980-05-23 Semiconductor device Pending JPS56165359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6929080A JPS56165359A (en) 1980-05-23 1980-05-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6929080A JPS56165359A (en) 1980-05-23 1980-05-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56165359A true JPS56165359A (en) 1981-12-18

Family

ID=13398307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6929080A Pending JPS56165359A (en) 1980-05-23 1980-05-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165359A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2646289A1 (en) * 1989-04-21 1990-10-26 Mikoshiba Nobuo INTEGRATED CIRCUIT OF THE MOSFET TYPE, PARTICULARLY LOGIC INVERTER
FR2661277A1 (en) * 1990-04-20 1991-10-25 Mikoshiba Nobuo INTEGRATED CIRCUIT OF THE MOSFET TYPE, PARTICULARLY LOGIC INVERTER.
US9034508B2 (en) 2002-03-29 2015-05-19 Water Gremlin Company Multiple casting apparatus and method
US9190654B2 (en) 2004-01-02 2015-11-17 Water Gremlin Company Battery parts and associated systems and methods
US9748551B2 (en) 2011-06-29 2017-08-29 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US9917293B2 (en) 2009-04-30 2018-03-13 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US9954214B2 (en) 2013-03-15 2018-04-24 Water Gremlin Company Systems and methods for manufacturing battery parts
US11038156B2 (en) 2018-12-07 2021-06-15 Water Gremlin Company Battery parts having solventless acid barriers and associated systems and methods

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4847281A (en) * 1971-10-18 1973-07-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4847281A (en) * 1971-10-18 1973-07-05

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2646289A1 (en) * 1989-04-21 1990-10-26 Mikoshiba Nobuo INTEGRATED CIRCUIT OF THE MOSFET TYPE, PARTICULARLY LOGIC INVERTER
FR2661277A1 (en) * 1990-04-20 1991-10-25 Mikoshiba Nobuo INTEGRATED CIRCUIT OF THE MOSFET TYPE, PARTICULARLY LOGIC INVERTER.
US9034508B2 (en) 2002-03-29 2015-05-19 Water Gremlin Company Multiple casting apparatus and method
US10283754B2 (en) 2004-01-02 2019-05-07 Water Gremlin Company Battery parts and associated systems and methods
US9190654B2 (en) 2004-01-02 2015-11-17 Water Gremlin Company Battery parts and associated systems and methods
US11942664B2 (en) 2009-04-30 2024-03-26 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US9917293B2 (en) 2009-04-30 2018-03-13 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US9935306B2 (en) 2009-04-30 2018-04-03 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US10910625B2 (en) 2009-04-30 2021-02-02 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US10181595B2 (en) 2011-06-29 2019-01-15 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US9748551B2 (en) 2011-06-29 2017-08-29 Water Gremlin Company Battery parts having retaining and sealing features and associated methods of manufacture and use
US10217987B2 (en) 2013-03-15 2019-02-26 Water Gremlin Company Systems and methods for manufacturing battery parts
US9954214B2 (en) 2013-03-15 2018-04-24 Water Gremlin Company Systems and methods for manufacturing battery parts
US11038156B2 (en) 2018-12-07 2021-06-15 Water Gremlin Company Battery parts having solventless acid barriers and associated systems and methods
US11283141B2 (en) 2018-12-07 2022-03-22 Water Gremlin Company Battery parts having solventless acid barriers and associated systems and methods
US11804640B2 (en) 2018-12-07 2023-10-31 Water Gremlin Company Battery parts having solventless acid barriers and associated systems and methods

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