JPS57130469A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS57130469A JPS57130469A JP1613981A JP1613981A JPS57130469A JP S57130469 A JPS57130469 A JP S57130469A JP 1613981 A JP1613981 A JP 1613981A JP 1613981 A JP1613981 A JP 1613981A JP S57130469 A JPS57130469 A JP S57130469A
- Authority
- JP
- Japan
- Prior art keywords
- onto
- substrate
- regions
- film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To prevent the increase of leakage currents due to the alloying of electrode metal, and to eliminate the need for a boring process by forming the source and drain electrodes of the MIS type FET onto a diffusion layer through a tunnel barrier film consisting of an extremely thin dielectric film. CONSTITUTION:The N<+> diffusion regions 2, 3 are shaped to one main surface of a substrate such as a P type Si substrate, and SiO2 films 5, 6 with 20-200Angstrom thickness are formed onto the regions 2, 3 surrounded by a field film 4. A gate oxide film 9 in approximately 500Angstrom is molded onto the substrate between the regions 2, 3. A gate electrode 10, the source electrode 7 and the drain electrode 8 consisting of Al, etc. are each shaped onto the oxide film 9 and oxide films 5, 6, and the FET is formed. Accordingly, FET operation is enabled because electrons can pass through between each of the electrodes 7, 8 and the diffusion layers 2, 3 when gate voltage bringing a channel to a conductive condition is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1613981A JPS57130469A (en) | 1981-02-05 | 1981-02-05 | Mis type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1613981A JPS57130469A (en) | 1981-02-05 | 1981-02-05 | Mis type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57130469A true JPS57130469A (en) | 1982-08-12 |
Family
ID=11908162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1613981A Pending JPS57130469A (en) | 1981-02-05 | 1981-02-05 | Mis type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130469A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222697A (en) * | 2011-06-28 | 2011-10-19 | 复旦大学 | Grid-control metal-insulator device based on electronic tunneling |
| CN102231391A (en) * | 2011-06-28 | 2011-11-02 | 复旦大学 | Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure |
| CN102244102A (en) * | 2011-06-28 | 2011-11-16 | 复旦大学 | Electron tunneling based enclosure type grid control metal-insulator device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5650573A (en) * | 1979-10-02 | 1981-05-07 | Toshiba Corp | Mis tunnel diode type mosfet |
-
1981
- 1981-02-05 JP JP1613981A patent/JPS57130469A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5650573A (en) * | 1979-10-02 | 1981-05-07 | Toshiba Corp | Mis tunnel diode type mosfet |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222697A (en) * | 2011-06-28 | 2011-10-19 | 复旦大学 | Grid-control metal-insulator device based on electronic tunneling |
| CN102231391A (en) * | 2011-06-28 | 2011-11-02 | 复旦大学 | Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure |
| CN102244102A (en) * | 2011-06-28 | 2011-11-16 | 复旦大学 | Electron tunneling based enclosure type grid control metal-insulator device |
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