JPS5687368A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5687368A JPS5687368A JP16512379A JP16512379A JPS5687368A JP S5687368 A JPS5687368 A JP S5687368A JP 16512379 A JP16512379 A JP 16512379A JP 16512379 A JP16512379 A JP 16512379A JP S5687368 A JPS5687368 A JP S5687368A
- Authority
- JP
- Japan
- Prior art keywords
- injection region
- ion injection
- substrate
- ion
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002347 injection Methods 0.000 abstract 4
- 239000007924 injection Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 230000001939 inductive effect Effects 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To obtain the desired threshold value for the subject semiconductor device by a method wherein the first ion injection region of the same inductive type as the semiconductor substrate and the second ion injection region of a reverse conductive type are provided on the channel section. CONSTITUTION:A gate oxidation film 104, a molybdenum gate electrode 107, a source and drain 103, and an aluminum wiring 108 are formed on a p type silicon substrate 101 and a MOSFET is obtained. Then the first ion injection region 105 is formed at the channel section of the FET by injecting the impurities (boron ion) of the same inductive type as the substrate 101 and in addition, the second ion injection region 106 is formed by doubly injecting the impurities (phosphoric ion) having the conductive type reverse to the substrate. And the impurity density required in forming the short channel MOSFET is secured by the region 105 and the desired threshold voltage is obtained by the resion 106.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16512379A JPS5687368A (en) | 1979-12-19 | 1979-12-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16512379A JPS5687368A (en) | 1979-12-19 | 1979-12-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5687368A true JPS5687368A (en) | 1981-07-15 |
Family
ID=15806343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16512379A Pending JPS5687368A (en) | 1979-12-19 | 1979-12-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687368A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6265374A (en) * | 1985-09-17 | 1987-03-24 | Toshiba Corp | Manufacture of semiconductor device |
EP0239019A2 (en) * | 1986-03-22 | 1987-09-30 | Kabushiki Kaisha Toshiba | Field-effect transistor devices |
US4845047A (en) * | 1987-06-25 | 1989-07-04 | Texas Instruments Incorporated | Threshold adjustment method for an IGFET |
US5060033A (en) * | 1988-08-18 | 1991-10-22 | Seiko Epson Corporation | Semiconductor device and method of producing semiconductor device |
US5081052A (en) * | 1986-06-25 | 1992-01-14 | Hitachi, Ltd. | ROM and process for producing the same |
US5095348A (en) * | 1989-10-02 | 1992-03-10 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
US5156990A (en) * | 1986-07-23 | 1992-10-20 | Texas Instruments Incorporated | Floating-gate memory cell with tailored doping profile |
-
1979
- 1979-12-19 JP JP16512379A patent/JPS5687368A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6265374A (en) * | 1985-09-17 | 1987-03-24 | Toshiba Corp | Manufacture of semiconductor device |
JPH0521352B2 (en) * | 1985-09-17 | 1993-03-24 | Tokyo Shibaura Electric Co | |
EP0239019A2 (en) * | 1986-03-22 | 1987-09-30 | Kabushiki Kaisha Toshiba | Field-effect transistor devices |
US5081052A (en) * | 1986-06-25 | 1992-01-14 | Hitachi, Ltd. | ROM and process for producing the same |
US5156990A (en) * | 1986-07-23 | 1992-10-20 | Texas Instruments Incorporated | Floating-gate memory cell with tailored doping profile |
US4845047A (en) * | 1987-06-25 | 1989-07-04 | Texas Instruments Incorporated | Threshold adjustment method for an IGFET |
US5060033A (en) * | 1988-08-18 | 1991-10-22 | Seiko Epson Corporation | Semiconductor device and method of producing semiconductor device |
US5095348A (en) * | 1989-10-02 | 1992-03-10 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
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