JPS5730368A - Tunnel fet - Google Patents
Tunnel fetInfo
- Publication number
- JPS5730368A JPS5730368A JP10414080A JP10414080A JPS5730368A JP S5730368 A JPS5730368 A JP S5730368A JP 10414080 A JP10414080 A JP 10414080A JP 10414080 A JP10414080 A JP 10414080A JP S5730368 A JPS5730368 A JP S5730368A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- electrode
- drain
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 7
- 239000010408 film Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To provide a tunnel FET which can operate at a high speed with a reverse conductive type impurity region to a semiconductor substrate, formed on a low density layer of the same conductive type as the substrate, formed on the substrate as a gate and with the substrate as a drain by forming a source electrode via a semi-insulating thin film on the substrate. CONSTITUTION:An N type epitaxial layer 15 is grown on an N<+> type semiconductor substrate 14, and an SiO2 film 15 having several tenAngstrom of thickness is formed on the surface of the layer. The semi-insulating film 16 for performing a tunnel may be a film made of nitrided silicon or a polycrystalline silicon. A source electrode 13 is formed on the film 16. A ring-shaped P<+> type impurity region 17 is formed by an ion injection method or the like to surround the electrode 13, and a gate electrode 11 is connected to the region 17. The substrate 14 is connected to the drain electrode 14, and a tunnel current between the source 13 and the drain 14 is controlled by the voltage applied to the gate 11. The conductive types of the respective semiconductor may be reversely to the above stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10414080A JPS5730368A (en) | 1980-07-29 | 1980-07-29 | Tunnel fet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10414080A JPS5730368A (en) | 1980-07-29 | 1980-07-29 | Tunnel fet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5730368A true JPS5730368A (en) | 1982-02-18 |
| JPS631758B2 JPS631758B2 (en) | 1988-01-13 |
Family
ID=14372785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10414080A Granted JPS5730368A (en) | 1980-07-29 | 1980-07-29 | Tunnel fet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730368A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179784A (en) * | 1986-02-04 | 1987-08-06 | Agency Of Ind Science & Technol | Field-effect transistor |
| US5954914A (en) * | 1996-02-23 | 1999-09-21 | Nippon Petrochemicals Company, Limited | Web lamination device |
| US6054086A (en) * | 1995-03-24 | 2000-04-25 | Nippon Petrochemicals Co., Ltd. | Process of making high-strength yarns |
| US6127293A (en) * | 1994-12-16 | 2000-10-03 | Nippon Petrochemicals Co., Ltd. | Laminated bodies and woven and nonwoven fabrics comprising α-olefin polymeric adhesion materials catalyzed with cyclopentadienyl catalyst |
-
1980
- 1980-07-29 JP JP10414080A patent/JPS5730368A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179784A (en) * | 1986-02-04 | 1987-08-06 | Agency Of Ind Science & Technol | Field-effect transistor |
| US6127293A (en) * | 1994-12-16 | 2000-10-03 | Nippon Petrochemicals Co., Ltd. | Laminated bodies and woven and nonwoven fabrics comprising α-olefin polymeric adhesion materials catalyzed with cyclopentadienyl catalyst |
| US6054086A (en) * | 1995-03-24 | 2000-04-25 | Nippon Petrochemicals Co., Ltd. | Process of making high-strength yarns |
| US5954914A (en) * | 1996-02-23 | 1999-09-21 | Nippon Petrochemicals Company, Limited | Web lamination device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS631758B2 (en) | 1988-01-13 |
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