JPS5658267A - Insulated gate type field-effect transistor - Google Patents

Insulated gate type field-effect transistor

Info

Publication number
JPS5658267A
JPS5658267A JP13290879A JP13290879A JPS5658267A JP S5658267 A JPS5658267 A JP S5658267A JP 13290879 A JP13290879 A JP 13290879A JP 13290879 A JP13290879 A JP 13290879A JP S5658267 A JPS5658267 A JP S5658267A
Authority
JP
Japan
Prior art keywords
layer
region
nose
drain region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13290879A
Other languages
Japanese (ja)
Inventor
Kuniharu Kato
Hitoshi Nagano
Yuki Shimada
Shusaburo Imai
Kenji Hideshima
Hisashi Haneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13290879A priority Critical patent/JPS5658267A/en
Publication of JPS5658267A publication Critical patent/JPS5658267A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Abstract

PURPOSE:To decrease the concentration of an electric field and increase dielectric resistance by a mechanism wherein a gate SiO2 film is formed on a wall surface of a concave section made up to a drain region when preparing a longitudinal MOSFET, and a region having the extremely low concentration of impurities is previously formed into the drain region at a nose of the concave section. CONSTITUTION:An N<-> layer 202 functioning as the second drain region is grown on an N<+> type semiconductor substrate 201 serving as the first drain region in an epitaxial shape, a P type layer 203 is formed on the layer 202, and an N<+> type source region 204 is made up into the layer 203 in a diffusion shape. A groove section 205, which is located at the central section of the region 204 and a nose thereof is put into the layer 202, is bored, the wall surface is coated with an Al gate electrode 207 through a gate SiO2 film 206, a window is opened to the SiO2 film formed on an exposed surface of the layer 203 and a source electrode 208 contacting with the region 204 is made up, and a drain electrode 209 is built up on the back of the substrate 201, thus forming an FET. An N(-)(-) type region 210 is previously made up into the layer 202 in response to the nose of the groove section 205 in this constitution, the distribution of potential here is eased, the concentration of an electric field is decreased, and the FET is made resistent to high voltage.
JP13290879A 1979-10-17 1979-10-17 Insulated gate type field-effect transistor Pending JPS5658267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13290879A JPS5658267A (en) 1979-10-17 1979-10-17 Insulated gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13290879A JPS5658267A (en) 1979-10-17 1979-10-17 Insulated gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5658267A true JPS5658267A (en) 1981-05-21

Family

ID=15092333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13290879A Pending JPS5658267A (en) 1979-10-17 1979-10-17 Insulated gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5658267A (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840857A (en) * 1981-08-10 1983-03-09 シ−メンス・アクチエンゲゼルシヤフト Epitaxial transistor
EP0308612A2 (en) * 1987-09-24 1989-03-29 Mitsubishi Denki Kabushiki Kaisha Field effect transistor and manufacturing method thereof
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US4983535A (en) * 1981-10-15 1991-01-08 Siliconix Incorporated Vertical DMOS transistor fabrication process
JPH04251983A (en) * 1991-01-09 1992-09-08 Toshiba Corp Semiconductor device
EP0523223A1 (en) * 1991-01-31 1993-01-20 SILICONIX Incorporated Power metal-oxide-semiconductor field effect transistor
US5350934A (en) * 1992-03-05 1994-09-27 Kabushiki Kaisha Toshiba Conductivity modulation type insulated gate field effect transistor
US5532179A (en) * 1992-07-24 1996-07-02 Siliconix Incorporated Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5578851A (en) * 1994-08-15 1996-11-26 Siliconix Incorporated Trenched DMOS transistor having thick field oxide in termination region
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
JPH1012877A (en) * 1996-06-27 1998-01-16 Nec Corp Vertical field effect transistor
US5821583A (en) * 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process
US5929481A (en) * 1996-07-19 1999-07-27 Siliconix Incorporated High density trench DMOS transistor with trench bottom implant
JP2001267570A (en) * 2000-03-15 2001-09-28 Mitsubishi Electric Corp Semiconductor device and method of manufacturing semiconductor device
JP2002026324A (en) * 2000-04-04 2002-01-25 Internatl Rectifier Corp Improved low voltage power mosfet device and process for its manufacturing
US6753573B2 (en) * 2002-11-06 2004-06-22 Renesas Technology Corp. Semiconductor device having complementary MOS transistor
US6800899B2 (en) * 2001-08-30 2004-10-05 Micron Technology, Inc. Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor
US7229872B2 (en) 2000-04-04 2007-06-12 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
JP2012199515A (en) * 2011-03-10 2012-10-18 Toshiba Corp Semiconductor device and method of manufacturing the same
US8889511B2 (en) 2003-05-20 2014-11-18 Fairchild Semiconductor Corporation Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
US9224853B2 (en) 2007-12-26 2015-12-29 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
CN106158925A (en) * 2015-05-14 2016-11-23 富士电机株式会社 Semiconductor device and the manufacture method of semiconductor device
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
JP6237845B1 (en) * 2016-08-24 2017-11-29 富士電機株式会社 Vertical MOSFET and manufacturing method of vertical MOSFET
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840857A (en) * 1981-08-10 1983-03-09 シ−メンス・アクチエンゲゼルシヤフト Epitaxial transistor
JPH0481343B2 (en) * 1981-08-10 1992-12-22 Siemens Ag
US4983535A (en) * 1981-10-15 1991-01-08 Siliconix Incorporated Vertical DMOS transistor fabrication process
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
EP0308612A2 (en) * 1987-09-24 1989-03-29 Mitsubishi Denki Kabushiki Kaisha Field effect transistor and manufacturing method thereof
JPH04251983A (en) * 1991-01-09 1992-09-08 Toshiba Corp Semiconductor device
EP0523223A1 (en) * 1991-01-31 1993-01-20 SILICONIX Incorporated Power metal-oxide-semiconductor field effect transistor
EP0523223A4 (en) * 1991-01-31 1993-09-22 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
US5350934A (en) * 1992-03-05 1994-09-27 Kabushiki Kaisha Toshiba Conductivity modulation type insulated gate field effect transistor
US5532179A (en) * 1992-07-24 1996-07-02 Siliconix Incorporated Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5981344A (en) * 1992-07-24 1999-11-09 Siliconix Incorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5578851A (en) * 1994-08-15 1996-11-26 Siliconix Incorporated Trenched DMOS transistor having thick field oxide in termination region
US5639676A (en) * 1994-08-15 1997-06-17 Siliconix Incorporated Trenched DMOS transistor fabrication having thick termination region oxide
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
EP0808513A4 (en) * 1995-02-10 1998-10-07 Siliconix Inc TRENCH FIELD EFFECT TRANSISTOR WITH REDUCED PUNCH-THROUGH SUSCEPTIBILITY AND LOW R DSon?
EP0808513A1 (en) * 1995-02-10 1997-11-26 Siliconix Incorporated TRENCH FIELD EFFECT TRANSISTOR WITH REDUCED PUNCH-THROUGH SUSCEPTIBILITY AND LOW R DSon?
US5821583A (en) * 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
JPH1012877A (en) * 1996-06-27 1998-01-16 Nec Corp Vertical field effect transistor
US5929481A (en) * 1996-07-19 1999-07-27 Siliconix Incorporated High density trench DMOS transistor with trench bottom implant
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process
JP2001267570A (en) * 2000-03-15 2001-09-28 Mitsubishi Electric Corp Semiconductor device and method of manufacturing semiconductor device
JP2002026324A (en) * 2000-04-04 2002-01-25 Internatl Rectifier Corp Improved low voltage power mosfet device and process for its manufacturing
US7229872B2 (en) 2000-04-04 2007-06-12 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US8487368B2 (en) 2000-04-04 2013-07-16 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US9368587B2 (en) 2001-01-30 2016-06-14 Fairchild Semiconductor Corporation Accumulation-mode field effect transistor with improved current capability
US6800899B2 (en) * 2001-08-30 2004-10-05 Micron Technology, Inc. Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor
US7041556B2 (en) 2001-08-30 2006-05-09 Micron Technology, Inc. Vertical transistor and method of making
US7355244B2 (en) 2001-08-30 2008-04-08 Micron Technology, Inc. Electrical devices with multi-walled recesses
US6753573B2 (en) * 2002-11-06 2004-06-22 Renesas Technology Corp. Semiconductor device having complementary MOS transistor
US8936985B2 (en) 2003-05-20 2015-01-20 Fairchild Semiconductor Corporation Methods related to power semiconductor devices with thick bottom oxide layers
US8889511B2 (en) 2003-05-20 2014-11-18 Fairchild Semiconductor Corporation Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
US9224853B2 (en) 2007-12-26 2015-12-29 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US9041008B2 (en) 2011-03-10 2015-05-26 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2012199515A (en) * 2011-03-10 2012-10-18 Toshiba Corp Semiconductor device and method of manufacturing the same
US9935193B2 (en) 2012-02-09 2018-04-03 Siliconix Technology C. V. MOSFET termination trench
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US10229988B2 (en) 2012-05-30 2019-03-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US10283587B2 (en) 2014-06-23 2019-05-07 Vishay-Siliconix Modulated super junction power MOSFET devices
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US10340377B2 (en) 2014-08-19 2019-07-02 Vishay-Siliconix Edge termination for super-junction MOSFETs
JP2016219446A (en) * 2015-05-14 2016-12-22 富士電機株式会社 Semiconductor device and method of manufacturing the same
CN106158925A (en) * 2015-05-14 2016-11-23 富士电机株式会社 Semiconductor device and the manufacture method of semiconductor device
US10593787B2 (en) 2015-05-14 2020-03-17 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US10943997B2 (en) 2015-05-14 2021-03-09 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6237845B1 (en) * 2016-08-24 2017-11-29 富士電機株式会社 Vertical MOSFET and manufacturing method of vertical MOSFET
JP2018032741A (en) * 2016-08-24 2018-03-01 富士電機株式会社 Vertical mosfet and manufacturing method of vertical mosfet

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