JPS6461060A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6461060A
JPS6461060A JP21870987A JP21870987A JPS6461060A JP S6461060 A JPS6461060 A JP S6461060A JP 21870987 A JP21870987 A JP 21870987A JP 21870987 A JP21870987 A JP 21870987A JP S6461060 A JPS6461060 A JP S6461060A
Authority
JP
Japan
Prior art keywords
main faces
films
mosfets
thicker
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21870987A
Other languages
Japanese (ja)
Inventor
Shigeru Kusunoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21870987A priority Critical patent/JPS6461060A/en
Publication of JPS6461060A publication Critical patent/JPS6461060A/en
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To improve a current amplification factor and to reduce a leakage current in a semiconductor device by increasing the thickness of the gate insulating film of the surface of a region in which the main faces of MOSFETs formed on different main faces cross thicker than that of the other film. CONSTITUTION:An interelement insulating film 102 is formed on a semiconductor substrate 101, and gate insulating films 103, 113 are respectively formed on the first and second main faces of the substrate 101 therebetween. The thickness of a section 106 in which the films 103, 113 cross is formed thicker than that of the other section. Then, gate electrodes 104 are formed on the films 103, 113, and source, drain regions 105 of the MOSFETs are formed on the first and second main faces. Thus, a channel is scarcely opened at a low gate voltage to reduce its leakage current. Further, its current amplification factor can be increased.
JP21870987A 1987-09-01 1987-09-01 Semiconductor device Pending JPS6461060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21870987A JPS6461060A (en) 1987-09-01 1987-09-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21870987A JPS6461060A (en) 1987-09-01 1987-09-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6461060A true JPS6461060A (en) 1989-03-08

Family

ID=16724199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21870987A Pending JPS6461060A (en) 1987-09-01 1987-09-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6461060A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990013918A1 (en) * 1989-05-12 1990-11-15 Oki Electric Industry Co., Ltd. Field effect transistor
JP2005203798A (en) * 2004-01-17 2005-07-28 Samsung Electronics Co Ltd Finfet transistor of at least five-faces channel type and its manufacturing method
JP2011176052A (en) * 2010-02-23 2011-09-08 Oki Semiconductor Co Ltd Semiconductor device, and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990013918A1 (en) * 1989-05-12 1990-11-15 Oki Electric Industry Co., Ltd. Field effect transistor
US5281547A (en) * 1989-05-12 1994-01-25 Oki Electric Industry Co., Ltd. Method for manufacturing a field effect transistor
JP2005203798A (en) * 2004-01-17 2005-07-28 Samsung Electronics Co Ltd Finfet transistor of at least five-faces channel type and its manufacturing method
JP2011176052A (en) * 2010-02-23 2011-09-08 Oki Semiconductor Co Ltd Semiconductor device, and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JPS56169368A (en) High withstand voltage mos field effect semiconductor device
EP0270323A3 (en) A thin-film transistor
JPS56169369A (en) High withstand voltage mos field effect semiconductor device
JPS5688363A (en) Field effect transistor
JPS6461060A (en) Semiconductor device
JPS6461059A (en) Semiconductor device
JPS57141965A (en) Insulated gate type field effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS56126973A (en) Mos field effect transistor
JPS6454762A (en) Insulated gate field effect transistor
JPS6489372A (en) Semiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS6433970A (en) Field effect semiconductor device
JPS6439065A (en) Thin film field-effect transistor
JPS56165358A (en) Semiconductor device
JPS5736863A (en) Manufacture of semiconductor device
JPS5257786A (en) Field effect transistor
JPS57130469A (en) Mis type semiconductor device
JPS5693368A (en) Mis transistor device
KR0120542B1 (en) Semiconductor device and method thereof
JPS54127289A (en) Semiconductor integrated circuit device and its manufacture
JPS5718363A (en) Msis type semiconductor element
JPS641275A (en) Semiconductor device
JPS57106078A (en) Mos semiconductor device
JPS55102274A (en) Insulated gate field effect transistor