JPS6461060A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6461060A JPS6461060A JP21870987A JP21870987A JPS6461060A JP S6461060 A JPS6461060 A JP S6461060A JP 21870987 A JP21870987 A JP 21870987A JP 21870987 A JP21870987 A JP 21870987A JP S6461060 A JPS6461060 A JP S6461060A
- Authority
- JP
- Japan
- Prior art keywords
- main faces
- films
- mosfets
- thicker
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To improve a current amplification factor and to reduce a leakage current in a semiconductor device by increasing the thickness of the gate insulating film of the surface of a region in which the main faces of MOSFETs formed on different main faces cross thicker than that of the other film. CONSTITUTION:An interelement insulating film 102 is formed on a semiconductor substrate 101, and gate insulating films 103, 113 are respectively formed on the first and second main faces of the substrate 101 therebetween. The thickness of a section 106 in which the films 103, 113 cross is formed thicker than that of the other section. Then, gate electrodes 104 are formed on the films 103, 113, and source, drain regions 105 of the MOSFETs are formed on the first and second main faces. Thus, a channel is scarcely opened at a low gate voltage to reduce its leakage current. Further, its current amplification factor can be increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21870987A JPS6461060A (en) | 1987-09-01 | 1987-09-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21870987A JPS6461060A (en) | 1987-09-01 | 1987-09-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461060A true JPS6461060A (en) | 1989-03-08 |
Family
ID=16724199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21870987A Pending JPS6461060A (en) | 1987-09-01 | 1987-09-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461060A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990013918A1 (en) * | 1989-05-12 | 1990-11-15 | Oki Electric Industry Co., Ltd. | Field effect transistor |
JP2005203798A (en) * | 2004-01-17 | 2005-07-28 | Samsung Electronics Co Ltd | Finfet transistor of at least five-faces channel type and its manufacturing method |
JP2011176052A (en) * | 2010-02-23 | 2011-09-08 | Oki Semiconductor Co Ltd | Semiconductor device, and method of manufacturing the same |
-
1987
- 1987-09-01 JP JP21870987A patent/JPS6461060A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990013918A1 (en) * | 1989-05-12 | 1990-11-15 | Oki Electric Industry Co., Ltd. | Field effect transistor |
US5281547A (en) * | 1989-05-12 | 1994-01-25 | Oki Electric Industry Co., Ltd. | Method for manufacturing a field effect transistor |
JP2005203798A (en) * | 2004-01-17 | 2005-07-28 | Samsung Electronics Co Ltd | Finfet transistor of at least five-faces channel type and its manufacturing method |
JP2011176052A (en) * | 2010-02-23 | 2011-09-08 | Oki Semiconductor Co Ltd | Semiconductor device, and method of manufacturing the same |
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