JPS57141965A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS57141965A
JPS57141965A JP56027294A JP2729481A JPS57141965A JP S57141965 A JPS57141965 A JP S57141965A JP 56027294 A JP56027294 A JP 56027294A JP 2729481 A JP2729481 A JP 2729481A JP S57141965 A JPS57141965 A JP S57141965A
Authority
JP
Japan
Prior art keywords
region
layer
type
drain
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56027294A
Other languages
Japanese (ja)
Inventor
Kuniharu Kato
Hitoshi Nagano
Yuki Shimada
Iwao Kuroda
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56027294A priority Critical patent/JPS57141965A/en
Publication of JPS57141965A publication Critical patent/JPS57141965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To reduce ON resistance by providing a one conductive type source region in a one conductive type drain region through two reverse conductive type regions to obtain the IGFET, and providing the surface layer part having high impurity concentration in a drain region located between the two reverse conductive region. CONSTITUTION:A substrate 3 which is to become the drain region is prepared by laminating an N<+> type layer 2 and an N<-> type layer 1. A drain electrode M4 is deposited on the entire back surface of the layer 2. Then two P type regions Z1 are diffused and formed in the layer 1. Z3 which is to become a source region is provided in each region. A source electrode M1 is attached on the area from the central part of each region Z3 and to the outer edge part of each region 1. A gate electrode M2 which faces the M1 is provided on the area from each region Z3 to the edge of each region Z1 through a gate insulating film 5. Thus the FET is obtained. In this constitution, only the surface layer part of the layer 1 between the region Z1's is transformed into an N<+> type region 25, the ON resistance is decreased, and the IGFET with low power consumption is obtained.
JP56027294A 1981-02-26 1981-02-26 Insulated gate type field effect transistor Pending JPS57141965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027294A JPS57141965A (en) 1981-02-26 1981-02-26 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027294A JPS57141965A (en) 1981-02-26 1981-02-26 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS57141965A true JPS57141965A (en) 1982-09-02

Family

ID=12217062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027294A Pending JPS57141965A (en) 1981-02-26 1981-02-26 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS57141965A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141270A (en) * 1983-01-31 1984-08-13 Matsushita Electric Ind Co Ltd Mos type semiconductor device
JPH01191477A (en) * 1988-01-27 1989-08-01 Fuji Electric Co Ltd Field-effect transistor
US4956700A (en) * 1987-08-17 1990-09-11 Siliconix Incorporated Integrated circuit with high power, vertical output transistor capability
US4962411A (en) * 1986-03-21 1990-10-09 Nippondenso Co., Ltd. Semiconductor device with current detecting function
US5155563A (en) * 1991-03-18 1992-10-13 Motorola, Inc. Semiconductor device having low source inductance
US5365085A (en) * 1990-07-30 1994-11-15 Nippondenso Co., Ltd. Power semiconductor device with a current detecting function
US6104233A (en) * 1990-04-13 2000-08-15 Kabushiki Kaisha Toshiba Substrate structure of semi-conductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141270A (en) * 1983-01-31 1984-08-13 Matsushita Electric Ind Co Ltd Mos type semiconductor device
US4962411A (en) * 1986-03-21 1990-10-09 Nippondenso Co., Ltd. Semiconductor device with current detecting function
US4956700A (en) * 1987-08-17 1990-09-11 Siliconix Incorporated Integrated circuit with high power, vertical output transistor capability
JPH01191477A (en) * 1988-01-27 1989-08-01 Fuji Electric Co Ltd Field-effect transistor
US6104233A (en) * 1990-04-13 2000-08-15 Kabushiki Kaisha Toshiba Substrate structure of semi-conductor device
US5365085A (en) * 1990-07-30 1994-11-15 Nippondenso Co., Ltd. Power semiconductor device with a current detecting function
US5155563A (en) * 1991-03-18 1992-10-13 Motorola, Inc. Semiconductor device having low source inductance

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