JPS54124686A - Mos transistor and its production - Google Patents

Mos transistor and its production

Info

Publication number
JPS54124686A
JPS54124686A JP3268478A JP3268478A JPS54124686A JP S54124686 A JPS54124686 A JP S54124686A JP 3268478 A JP3268478 A JP 3268478A JP 3268478 A JP3268478 A JP 3268478A JP S54124686 A JPS54124686 A JP S54124686A
Authority
JP
Japan
Prior art keywords
film
region
drain
type
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3268478A
Other languages
Japanese (ja)
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3268478A priority Critical patent/JPS54124686A/en
Publication of JPS54124686A publication Critical patent/JPS54124686A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To enhance a drain dielectric strength and reduce the drain voltage dependence of a threshold voltage by making the impurity density of the channel region, which is interposed between the source region and the drain region, uneven so that this impurity density may be lowest in the drain side and may be highest in the source side.
CONSTITUTION: Thick field SiO2 film 2 is provided at both edges of P-type Si substrate 1, and thin gate SiO2 film 3 is caused to adhere to the part between these films 2, and all the surface is covered with a laminated layer body of poly crystal Si layer 4 and Si3N4 film 5. Next film 5 is left only in the gate forming region and is made of film 6, and this film 6 is used as a mask to leave poly crystal gate layer 7 under film 6 by selective etching, and simultaneously, other poly crystal 4 is converted to SiO2 films 8 and 9. After that, film 6 is updated into film 10, and the film on the source forming region is removed, and exposed film 8 and film 3 under film 8 are over-etched. Then, P-type impurity is diffused there to provide P-type region 13, thereby making the density of the channel uneven. Next, a window is provided in the left film to provide N-type source drain region 14 in both sides of gate layer 7.
COPYRIGHT: (C)1979,JPO&Japio
JP3268478A 1978-03-20 1978-03-20 Mos transistor and its production Pending JPS54124686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3268478A JPS54124686A (en) 1978-03-20 1978-03-20 Mos transistor and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3268478A JPS54124686A (en) 1978-03-20 1978-03-20 Mos transistor and its production

Publications (1)

Publication Number Publication Date
JPS54124686A true JPS54124686A (en) 1979-09-27

Family

ID=12365693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3268478A Pending JPS54124686A (en) 1978-03-20 1978-03-20 Mos transistor and its production

Country Status (1)

Country Link
JP (1) JPS54124686A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924280A (en) * 1987-01-23 1990-05-08 Oki Electric Industry Co., Ltd. Semiconductor fet with long channel length
JPH04105366A (en) * 1990-08-24 1992-04-07 Nec Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834490A (en) * 1971-09-03 1973-05-18
JPS50107863A (en) * 1974-01-30 1975-08-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834490A (en) * 1971-09-03 1973-05-18
JPS50107863A (en) * 1974-01-30 1975-08-25

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924280A (en) * 1987-01-23 1990-05-08 Oki Electric Industry Co., Ltd. Semiconductor fet with long channel length
US4987464A (en) * 1987-01-23 1991-01-22 Oki Electric Industry Co., Ltd. Encapsulated FET semiconductor device with large W/L ratio
JPH04105366A (en) * 1990-08-24 1992-04-07 Nec Corp Semiconductor device

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