JPS5556663A - Insulating-gate type field-effect transistor - Google Patents
Insulating-gate type field-effect transistorInfo
- Publication number
- JPS5556663A JPS5556663A JP13020878A JP13020878A JPS5556663A JP S5556663 A JPS5556663 A JP S5556663A JP 13020878 A JP13020878 A JP 13020878A JP 13020878 A JP13020878 A JP 13020878A JP S5556663 A JPS5556663 A JP S5556663A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- sio
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain high-speed operation at the desired threshold voltage by contracting channels without increasing the capacitance between the gate and drain.
CONSTITUTION: A gate-insulating film 15, a poly-Si layer 16, and Si3N4 are stacked in the opening of an SiO2 14 on an n-type Si substrate 10. Si3N4 on the source side of the gate, and Si3N4 and a layer 16 on the source and gate region are etched out, and the portion other than the source region is covered by resist. Then, ions are implanted through the film 15, the resist is removed, heat treating is made, and an n-layer 11 is formed. Thereafter, selective covering is made by a resist film, P diffusion is made, thereby an n-layer 16 is formed. An SiO2 mask is provided again, and B diffusion is made. A p-type source 12, a drain 13, and a layer 16' are formed, all the surface is covered by SiO2 17, and electrodes 18 and 19 are attached. In this constitution, since the effective channel length is a difference between the layers 11 and 12 which is very short, very-high- speed operation can be carried out, and the threshold voltage can be mainted at the same level as before if the concentration is suitably adjusted. Furthermore, since the overlapping area of the gate electrode and the drain layer is small, the capacitance is small accordingly.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13020878A JPS5556663A (en) | 1978-10-23 | 1978-10-23 | Insulating-gate type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13020878A JPS5556663A (en) | 1978-10-23 | 1978-10-23 | Insulating-gate type field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5556663A true JPS5556663A (en) | 1980-04-25 |
| JPS6237818B2 JPS6237818B2 (en) | 1987-08-14 |
Family
ID=15028668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13020878A Granted JPS5556663A (en) | 1978-10-23 | 1978-10-23 | Insulating-gate type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5556663A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042869A (en) * | 1983-06-27 | 1985-03-07 | アルカテル・エヌ・ブイ | Method of producing semiconductor device |
| JPS62217666A (en) * | 1986-03-18 | 1987-09-25 | Nippon Denso Co Ltd | Mis transistor |
| JPH022666A (en) * | 1987-12-23 | 1990-01-08 | Texas Instr Inc <Ti> | Mos transistor having improved resolution |
| US5291050A (en) * | 1990-10-31 | 1994-03-01 | Fuji Electric Co., Ltd. | MOS device having reduced gate-to-drain capacitance |
| US5760441A (en) * | 1995-05-16 | 1998-06-02 | Nippon Steel Semiconductor Corporation | Metal oxide semiconductor device |
-
1978
- 1978-10-23 JP JP13020878A patent/JPS5556663A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042869A (en) * | 1983-06-27 | 1985-03-07 | アルカテル・エヌ・ブイ | Method of producing semiconductor device |
| JPS62217666A (en) * | 1986-03-18 | 1987-09-25 | Nippon Denso Co Ltd | Mis transistor |
| JPH022666A (en) * | 1987-12-23 | 1990-01-08 | Texas Instr Inc <Ti> | Mos transistor having improved resolution |
| US5291050A (en) * | 1990-10-31 | 1994-03-01 | Fuji Electric Co., Ltd. | MOS device having reduced gate-to-drain capacitance |
| US5760441A (en) * | 1995-05-16 | 1998-06-02 | Nippon Steel Semiconductor Corporation | Metal oxide semiconductor device |
| US6153911A (en) * | 1995-05-16 | 2000-11-28 | Nippon Steel Semiconductor Corp. | Metal oxide semiconductor device and method manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237818B2 (en) | 1987-08-14 |
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