JPS5587486A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS5587486A
JPS5587486A JP16312178A JP16312178A JPS5587486A JP S5587486 A JPS5587486 A JP S5587486A JP 16312178 A JP16312178 A JP 16312178A JP 16312178 A JP16312178 A JP 16312178A JP S5587486 A JPS5587486 A JP S5587486A
Authority
JP
Japan
Prior art keywords
source
channel
film
drain
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16312178A
Other languages
Japanese (ja)
Inventor
Hideki Oka
Koichi Nishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16312178A priority Critical patent/JPS5587486A/en
Publication of JPS5587486A publication Critical patent/JPS5587486A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To ensure a large saturation current at a higher drain voltage by forming the channel deeper gradually from the source layer to the drain layer.
CONSTITUTION: A window is etched through SiO2 film 12 on a p-type Si substrate 11 to produce n+-type source and drain layers 13 and 14. Then, after the removal of the film 12 on the channel formation region 16, the region is covered with a gate oxide film 17. With a resist provided on the source side, a stair-shaped channel 16 is produced by ion implantation. Then, after the removal of the resist 15, a gate electrode 18 is produced so as not to overlap the source and drain layers. Successively, covered with PSG19, a window is etched to produce wire patterns 20∼22. With such an arrangement, it is possible to obtain a buried channel MISFET having a better saturation characteristic and a clear threshold with a complete pinch off.
COPYRIGHT: (C)1980,JPO&Japio
JP16312178A 1978-12-26 1978-12-26 Mis type semiconductor device Pending JPS5587486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16312178A JPS5587486A (en) 1978-12-26 1978-12-26 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16312178A JPS5587486A (en) 1978-12-26 1978-12-26 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587486A true JPS5587486A (en) 1980-07-02

Family

ID=15767569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16312178A Pending JPS5587486A (en) 1978-12-26 1978-12-26 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587486A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321074A (en) * 1989-06-19 1991-01-29 Hitachi Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321074A (en) * 1989-06-19 1991-01-29 Hitachi Ltd Semiconductor integrated circuit device

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