JPS5587486A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS5587486A JPS5587486A JP16312178A JP16312178A JPS5587486A JP S5587486 A JPS5587486 A JP S5587486A JP 16312178 A JP16312178 A JP 16312178A JP 16312178 A JP16312178 A JP 16312178A JP S5587486 A JPS5587486 A JP S5587486A
- Authority
- JP
- Japan
- Prior art keywords
- source
- channel
- film
- drain
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To ensure a large saturation current at a higher drain voltage by forming the channel deeper gradually from the source layer to the drain layer.
CONSTITUTION: A window is etched through SiO2 film 12 on a p-type Si substrate 11 to produce n+-type source and drain layers 13 and 14. Then, after the removal of the film 12 on the channel formation region 16, the region is covered with a gate oxide film 17. With a resist provided on the source side, a stair-shaped channel 16 is produced by ion implantation. Then, after the removal of the resist 15, a gate electrode 18 is produced so as not to overlap the source and drain layers. Successively, covered with PSG19, a window is etched to produce wire patterns 20∼22. With such an arrangement, it is possible to obtain a buried channel MISFET having a better saturation characteristic and a clear threshold with a complete pinch off.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16312178A JPS5587486A (en) | 1978-12-26 | 1978-12-26 | Mis type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16312178A JPS5587486A (en) | 1978-12-26 | 1978-12-26 | Mis type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587486A true JPS5587486A (en) | 1980-07-02 |
Family
ID=15767569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16312178A Pending JPS5587486A (en) | 1978-12-26 | 1978-12-26 | Mis type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587486A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0321074A (en) * | 1989-06-19 | 1991-01-29 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1978
- 1978-12-26 JP JP16312178A patent/JPS5587486A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0321074A (en) * | 1989-06-19 | 1991-01-29 | Hitachi Ltd | Semiconductor integrated circuit device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56155572A (en) | Insulated gate field effect type semiconductor device | |
JPS5710266A (en) | Mis field effect semiconductor device | |
EP0148595A3 (en) | Method of fabricating mesa mosfet using overhang mask and resulting structure | |
JPS5587483A (en) | Mis type semiconductor device | |
JPS55132072A (en) | Mos semiconductor device | |
JPS57192063A (en) | Manufacture of semiconductor device | |
JPS5587486A (en) | Mis type semiconductor device | |
JPS5587481A (en) | Mis type semiconductor device | |
JPS5556663A (en) | Insulating-gate type field-effect transistor | |
JPS5575238A (en) | Method of fabricating semiconductor device | |
JPS5483778A (en) | Mos semiconductor device and its manufacture | |
JPS5491074A (en) | Semiconductor device | |
JPS54161889A (en) | Insulated gate type field effect transistor | |
JPS56104470A (en) | Semiconductor device and manufacture thereof | |
JPS5587482A (en) | Mis type semiconductor device | |
JPS5563876A (en) | Field-effect semiconductor device | |
JPS5492070A (en) | Mis field effect transistor and its manufacture | |
JPS54116885A (en) | Field effect transistor of insulation gate type and its manufacture | |
JPS52104879A (en) | Manufacture of semiconductor device | |
JPS56126957A (en) | Manufacture of semiconductor device | |
JPS56158447A (en) | Semiconductor integrated circuit and its manufacture | |
JPS5587485A (en) | Mis type semiconductor device | |
JPS55110066A (en) | Semiconductor device | |
JPS54121081A (en) | Integrated circuit device | |
JPS52147983A (en) | Insulation gate type semiconductor device |