JPS5492070A - Mis field effect transistor and its manufacture - Google Patents

Mis field effect transistor and its manufacture

Info

Publication number
JPS5492070A
JPS5492070A JP15823277A JP15823277A JPS5492070A JP S5492070 A JPS5492070 A JP S5492070A JP 15823277 A JP15823277 A JP 15823277A JP 15823277 A JP15823277 A JP 15823277A JP S5492070 A JPS5492070 A JP S5492070A
Authority
JP
Japan
Prior art keywords
layer
mask
window
coated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15823277A
Other languages
Japanese (ja)
Other versions
JPS59137B2 (en
Inventor
Tetsushi Sakai
Yoshiharu Kobayashi
Takahiro Makino
Masaaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52158232A priority Critical patent/JPS59137B2/en
Publication of JPS5492070A publication Critical patent/JPS5492070A/en
Publication of JPS59137B2 publication Critical patent/JPS59137B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To decrease the junction capacity between the substrate and the source- drain layer by forming the source and drain as small and shallow as possible and then providing the electrode via the lead-out layer.
CONSTITUTION: The nitride mask is formed on the oxide film coated on P-type substrate 31, and the ion injection and the partial oxidation are carried out with P+-layer 65 and oxide film 33 provided and with the mask removed. Then Al2O388, Si3N489, SiO290 and N-type doped poly Si91 are laminated. SiO2 mask 42 is then provided, and layer 96 and 40 are etched sequentially with window 97 drilled larger than window 95. Then Si mask 99 is coated and the etching is carried out through window 100, and poly Si103 is coated after exposure of the substrate. Layer 99 is lifted off to form poly Si layer 104 and 105. Then the oxidation is given via mask 101 to form oxide film 53 and 54 on the surface of layer 104 and 105 each. The opening is then drilled through mask 53 and 54, and P-type ion injection layer 63 is formed via oxide thin film 64 with electrode 70 provided. And electrode 68 and 69 are formed to layer 51 and 52 respectively. As layer 61 and 62 are small and shallow, the junction capacity is reduced between the substate and the source drain layer.
COPYRIGHT: (C)1979,JPO&Japio
JP52158232A 1977-12-29 1977-12-29 Manufacturing method of MIS field effect transistor Expired JPS59137B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52158232A JPS59137B2 (en) 1977-12-29 1977-12-29 Manufacturing method of MIS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52158232A JPS59137B2 (en) 1977-12-29 1977-12-29 Manufacturing method of MIS field effect transistor

Publications (2)

Publication Number Publication Date
JPS5492070A true JPS5492070A (en) 1979-07-20
JPS59137B2 JPS59137B2 (en) 1984-01-05

Family

ID=15667155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52158232A Expired JPS59137B2 (en) 1977-12-29 1977-12-29 Manufacturing method of MIS field effect transistor

Country Status (1)

Country Link
JP (1) JPS59137B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961186A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856381A (en) * 1971-11-18 1973-08-08
JPS4914792A (en) * 1972-04-14 1974-02-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856381A (en) * 1971-11-18 1973-08-08
JPS4914792A (en) * 1972-04-14 1974-02-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961186A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPH0481328B2 (en) * 1982-09-30 1992-12-22 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS59137B2 (en) 1984-01-05

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