JPS5492070A - Mis field effect transistor and its manufacture - Google Patents
Mis field effect transistor and its manufactureInfo
- Publication number
- JPS5492070A JPS5492070A JP15823277A JP15823277A JPS5492070A JP S5492070 A JPS5492070 A JP S5492070A JP 15823277 A JP15823277 A JP 15823277A JP 15823277 A JP15823277 A JP 15823277A JP S5492070 A JPS5492070 A JP S5492070A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- window
- coated
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To decrease the junction capacity between the substrate and the source- drain layer by forming the source and drain as small and shallow as possible and then providing the electrode via the lead-out layer.
CONSTITUTION: The nitride mask is formed on the oxide film coated on P-type substrate 31, and the ion injection and the partial oxidation are carried out with P+-layer 65 and oxide film 33 provided and with the mask removed. Then Al2O388, Si3N489, SiO290 and N-type doped poly Si91 are laminated. SiO2 mask 42 is then provided, and layer 96 and 40 are etched sequentially with window 97 drilled larger than window 95. Then Si mask 99 is coated and the etching is carried out through window 100, and poly Si103 is coated after exposure of the substrate. Layer 99 is lifted off to form poly Si layer 104 and 105. Then the oxidation is given via mask 101 to form oxide film 53 and 54 on the surface of layer 104 and 105 each. The opening is then drilled through mask 53 and 54, and P-type ion injection layer 63 is formed via oxide thin film 64 with electrode 70 provided. And electrode 68 and 69 are formed to layer 51 and 52 respectively. As layer 61 and 62 are small and shallow, the junction capacity is reduced between the substate and the source drain layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52158232A JPS59137B2 (en) | 1977-12-29 | 1977-12-29 | Manufacturing method of MIS field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52158232A JPS59137B2 (en) | 1977-12-29 | 1977-12-29 | Manufacturing method of MIS field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5492070A true JPS5492070A (en) | 1979-07-20 |
JPS59137B2 JPS59137B2 (en) | 1984-01-05 |
Family
ID=15667155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52158232A Expired JPS59137B2 (en) | 1977-12-29 | 1977-12-29 | Manufacturing method of MIS field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59137B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961186A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4856381A (en) * | 1971-11-18 | 1973-08-08 | ||
JPS4914792A (en) * | 1972-04-14 | 1974-02-08 |
-
1977
- 1977-12-29 JP JP52158232A patent/JPS59137B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4856381A (en) * | 1971-11-18 | 1973-08-08 | ||
JPS4914792A (en) * | 1972-04-14 | 1974-02-08 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961186A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0481328B2 (en) * | 1982-09-30 | 1992-12-22 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS59137B2 (en) | 1984-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR910005446A (en) | Semiconductor device manufacturing method | |
JPS5621372A (en) | Manufacture of semiconductor device | |
JPS5688354A (en) | Semiconductor integrated circuit device | |
KR880002211A (en) | Manufacturing method of proximity trough implanted with different conductivity dopant ions in high density CMOS circuit | |
JPS5736842A (en) | Semiconductor integrated circuit device | |
JPS5482175A (en) | Field effect transistor and its manufacture | |
JPS5492070A (en) | Mis field effect transistor and its manufacture | |
JPS5585068A (en) | Preparation of semiconductor device | |
JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
JPS5556663A (en) | Insulating-gate type field-effect transistor | |
JPS5575238A (en) | Method of fabricating semiconductor device | |
JPS5483778A (en) | Mos semiconductor device and its manufacture | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS5538019A (en) | Manufacturing of semiconductor device | |
JPS5492074A (en) | Mis field effect transistor and its manufacture | |
JPS5492073A (en) | Manufacture of mis field effect transistor | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
JPS6464315A (en) | Manufacture of semiconductor integrated circuit | |
JPS5591873A (en) | Manufacture of semiconductor device | |
JPS54154979A (en) | Manufacture of insulated gate type semiconductor device | |
JPS54129983A (en) | Manufacture of semiconductor device | |
JPS5587486A (en) | Mis type semiconductor device | |
JPS5591872A (en) | Manufacture of semiconductor device | |
JPS5492071A (en) | Semiconductor device and its manufacture | |
JPS5685853A (en) | Manufacture of semiconductor device |