JPS5591873A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5591873A JPS5591873A JP16515178A JP16515178A JPS5591873A JP S5591873 A JPS5591873 A JP S5591873A JP 16515178 A JP16515178 A JP 16515178A JP 16515178 A JP16515178 A JP 16515178A JP S5591873 A JPS5591873 A JP S5591873A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- heat treatment
- oxide film
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent variation in the threshold voltage due to the presence of mobile ions by heat treatment of a patterned phosphate glass layer retained on a molybdenum electrode.
CONSTITUTION: Field oxide film 12, gate oxide film 13 and thin molybdenum film 14 are formed on silicon substrate 11. Next, by operating heat treatment, patterned phosphate glass layer 15 is formed on a thin molybdenum layer 14, and further a molybdenum gate electrode 16 is formed. Next, by injecting ions, silicon oxide film 17 is formed, and by operating heat treatment, source-drain layer 18 is formed. Then, by opening a contact hole, a pattern of thin aluminum film 19 is formed, and thereby the desired MOS transistor is produced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16515178A JPS5591873A (en) | 1978-12-29 | 1978-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16515178A JPS5591873A (en) | 1978-12-29 | 1978-12-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591873A true JPS5591873A (en) | 1980-07-11 |
Family
ID=15806839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16515178A Pending JPS5591873A (en) | 1978-12-29 | 1978-12-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591873A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166077A (en) * | 1981-04-07 | 1982-10-13 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS59232461A (en) * | 1983-06-15 | 1984-12-27 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPH02281621A (en) * | 1989-03-22 | 1990-11-19 | American Teleph & Telegr Co <Att> | Semiconductor device and method of forming the same, apparatus for metal deposition and manufacture of metal source |
-
1978
- 1978-12-29 JP JP16515178A patent/JPS5591873A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166077A (en) * | 1981-04-07 | 1982-10-13 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPH0556026B2 (en) * | 1981-04-07 | 1993-08-18 | Matsushita Electric Ind Co Ltd | |
JPS59232461A (en) * | 1983-06-15 | 1984-12-27 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPH02281621A (en) * | 1989-03-22 | 1990-11-19 | American Teleph & Telegr Co <Att> | Semiconductor device and method of forming the same, apparatus for metal deposition and manufacture of metal source |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5775453A (en) | Semiconductor device and manufacture thereof | |
JPS5688354A (en) | Semiconductor integrated circuit device | |
JPS5591873A (en) | Manufacture of semiconductor device | |
JPS5717164A (en) | Manufacture of complementary mos semiconductor device | |
JPS57155777A (en) | Mos transistor | |
JPS5585068A (en) | Preparation of semiconductor device | |
JPS5591872A (en) | Manufacture of semiconductor device | |
JPS5538019A (en) | Manufacturing of semiconductor device | |
EP0002107A3 (en) | Method of making a planar semiconductor device | |
JPS54134579A (en) | Mis semiconductor device | |
JPS561572A (en) | Manufacture of semiconductor device | |
JPS57167677A (en) | Semiconductor device and manufacture thereof | |
JPS5552262A (en) | Mos semiconductor device | |
JPS5591871A (en) | Manufacture of semiconductor device | |
JPS56135971A (en) | Manufacture of mos type semiconductor device | |
JPS5530873A (en) | High withstand field-effect transistor of mis type | |
JPS52123878A (en) | Mos type semiconductor device and its production process | |
JPS5530867A (en) | Method of making semiconductor device | |
JPS5412566A (en) | Production of semiconductor device | |
JPS6459849A (en) | Manufacture of semiconductor device | |
JPS54129983A (en) | Manufacture of semiconductor device | |
JPS57207375A (en) | Manufacture of semiconductor device | |
JPS54104782A (en) | Mos type semiconductor device | |
JPS5423479A (en) | Manufacture for field effect transistor of insulation gate type | |
JPS572579A (en) | Manufacture of junction type field effect transistor |