JPS5591873A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591873A
JPS5591873A JP16515178A JP16515178A JPS5591873A JP S5591873 A JPS5591873 A JP S5591873A JP 16515178 A JP16515178 A JP 16515178A JP 16515178 A JP16515178 A JP 16515178A JP S5591873 A JPS5591873 A JP S5591873A
Authority
JP
Japan
Prior art keywords
molybdenum
heat treatment
oxide film
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16515178A
Other languages
Japanese (ja)
Inventor
Tadatoshi Nozaki
Hidekazu Okabayashi
Fumihiko Yanagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16515178A priority Critical patent/JPS5591873A/en
Publication of JPS5591873A publication Critical patent/JPS5591873A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent variation in the threshold voltage due to the presence of mobile ions by heat treatment of a patterned phosphate glass layer retained on a molybdenum electrode.
CONSTITUTION: Field oxide film 12, gate oxide film 13 and thin molybdenum film 14 are formed on silicon substrate 11. Next, by operating heat treatment, patterned phosphate glass layer 15 is formed on a thin molybdenum layer 14, and further a molybdenum gate electrode 16 is formed. Next, by injecting ions, silicon oxide film 17 is formed, and by operating heat treatment, source-drain layer 18 is formed. Then, by opening a contact hole, a pattern of thin aluminum film 19 is formed, and thereby the desired MOS transistor is produced.
COPYRIGHT: (C)1980,JPO&Japio
JP16515178A 1978-12-29 1978-12-29 Manufacture of semiconductor device Pending JPS5591873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16515178A JPS5591873A (en) 1978-12-29 1978-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16515178A JPS5591873A (en) 1978-12-29 1978-12-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591873A true JPS5591873A (en) 1980-07-11

Family

ID=15806839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16515178A Pending JPS5591873A (en) 1978-12-29 1978-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591873A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166077A (en) * 1981-04-07 1982-10-13 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS59232461A (en) * 1983-06-15 1984-12-27 Matsushita Electric Ind Co Ltd Semiconductor device
JPH02281621A (en) * 1989-03-22 1990-11-19 American Teleph & Telegr Co <Att> Semiconductor device and method of forming the same, apparatus for metal deposition and manufacture of metal source

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166077A (en) * 1981-04-07 1982-10-13 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPH0556026B2 (en) * 1981-04-07 1993-08-18 Matsushita Electric Ind Co Ltd
JPS59232461A (en) * 1983-06-15 1984-12-27 Matsushita Electric Ind Co Ltd Semiconductor device
JPH02281621A (en) * 1989-03-22 1990-11-19 American Teleph & Telegr Co <Att> Semiconductor device and method of forming the same, apparatus for metal deposition and manufacture of metal source

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