JPS561572A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS561572A JPS561572A JP7612779A JP7612779A JPS561572A JP S561572 A JPS561572 A JP S561572A JP 7612779 A JP7612779 A JP 7612779A JP 7612779 A JP7612779 A JP 7612779A JP S561572 A JPS561572 A JP S561572A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2 film
- region
- polycrystalline
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 239000011521 glass Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To provide a semiconductor device having high reliability by forming a polycrystalline Si gate electrode when forming an MOS type transistor, coating a glass layer containing boron thereon, and heat treating to alter it into a thick SiO2 film so as to form source and drain regions at both sides of the SiO2 film. CONSTITUTION:A thick field SiO2 film 13 is formed at the periphery of a P-type Si substrate 12, a thin SiO2 film 14 is formed on the substrate 12 at the portion surrounded by the film 13, a polycrystalline Si gate electrode 16 is formed on the central region of the film 14, and a polycrystalline Si wiring layer 17 is formed on the film 13 to surround only the electrode 16 with a glass layer 18 including boron. Then, the layer 18 as a mask it is etched to form openings 19 in the film 14 at both sides thereof, and to heat treat it to alter the glass layer 18 into a thick SiO2 film 20. Thereafter, ion is implanted through the thin SiO2 film 21 produced in the opening 19 to form an N-type region 21, to again heat treat it to diffuse the region 21 so as to form N-type source and drain regions 22. In this manner, no withstand voltage is decreased even if the depth of the region 22 is increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7612779A JPS561572A (en) | 1979-06-15 | 1979-06-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7612779A JPS561572A (en) | 1979-06-15 | 1979-06-15 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS561572A true JPS561572A (en) | 1981-01-09 |
| JPS6159669B2 JPS6159669B2 (en) | 1986-12-17 |
Family
ID=13596257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7612779A Granted JPS561572A (en) | 1979-06-15 | 1979-06-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561572A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023226A (en) * | 1988-06-20 | 1990-01-08 | Fujitsu Ltd | Manufacture of semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350497A (en) * | 1986-08-18 | 1988-03-03 | Crown Denken:Kk | Method for coloring titanium material |
-
1979
- 1979-06-15 JP JP7612779A patent/JPS561572A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023226A (en) * | 1988-06-20 | 1990-01-08 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159669B2 (en) | 1986-12-17 |
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