JPS5591872A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591872A
JPS5591872A JP16515078A JP16515078A JPS5591872A JP S5591872 A JPS5591872 A JP S5591872A JP 16515078 A JP16515078 A JP 16515078A JP 16515078 A JP16515078 A JP 16515078A JP S5591872 A JPS5591872 A JP S5591872A
Authority
JP
Japan
Prior art keywords
oxide film
film
heat treatment
mos transistor
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16515078A
Other languages
Japanese (ja)
Other versions
JPS6255312B2 (en
Inventor
Tadatoshi Nozaki
Hidekazu Okabayashi
Fumihiko Yanagawa
Takao Amasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16515078A priority Critical patent/JPS5591872A/en
Publication of JPS5591872A publication Critical patent/JPS5591872A/en
Publication of JPS6255312B2 publication Critical patent/JPS6255312B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To eliminate the instability in the threshold value in a MOS transistor due to the presence of mobile ions by forming an ideal, high-purity gate oxide film.
CONSTITUTION: Field oxide film 12, gate oxide film 13 and thin molybdenum film 14 are formed on silicon substrate 11. Next, patterned photoresist 15 is formed, and by etching the part of molybdenum film 14 not covered with photoresist 15, gate electrode 16 is formed. Next, by injecting impurity ions and operating heat treatment, phosphate glass layer 17 is formed. Then, by oprerating heat treatment, a source-drain layer 18 is formed. Next, a contact hole is formed. Then, a pattern of thin aluminum film 19 is formed, and thereby a desired MOS transistor is produced.
COPYRIGHT: (C)1980,JPO&Japio
JP16515078A 1978-12-29 1978-12-29 Manufacture of semiconductor device Granted JPS5591872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16515078A JPS5591872A (en) 1978-12-29 1978-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16515078A JPS5591872A (en) 1978-12-29 1978-12-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5591872A true JPS5591872A (en) 1980-07-11
JPS6255312B2 JPS6255312B2 (en) 1987-11-19

Family

ID=15806823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16515078A Granted JPS5591872A (en) 1978-12-29 1978-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591872A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916346A (en) * 1982-07-19 1984-01-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS61140177A (en) * 1984-12-13 1986-06-27 Nippon Precision Saakitsutsu Kk Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958788A (en) * 1972-10-04 1974-06-07
JPS523390A (en) * 1975-06-27 1977-01-11 Toshiba Corp Manufacturing method of semiconductor device
JPS5299085A (en) * 1976-02-16 1977-08-19 Mitsubishi Electric Corp Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958788A (en) * 1972-10-04 1974-06-07
JPS523390A (en) * 1975-06-27 1977-01-11 Toshiba Corp Manufacturing method of semiconductor device
JPS5299085A (en) * 1976-02-16 1977-08-19 Mitsubishi Electric Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916346A (en) * 1982-07-19 1984-01-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS61140177A (en) * 1984-12-13 1986-06-27 Nippon Precision Saakitsutsu Kk Semiconductor device

Also Published As

Publication number Publication date
JPS6255312B2 (en) 1987-11-19

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