JPS5530866A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5530866A JPS5530866A JP10452978A JP10452978A JPS5530866A JP S5530866 A JPS5530866 A JP S5530866A JP 10452978 A JP10452978 A JP 10452978A JP 10452978 A JP10452978 A JP 10452978A JP S5530866 A JPS5530866 A JP S5530866A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- silicon substrate
- channel cuts
- dioxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase the integration degree and reduce the consumption of power of providing, as channel cuts, narrow but deep grooves in a silicon substrate by the plasma etching techniques.
CONSTITUTION: Over a silicon substrate 1 is formed a silicon dioxide layer 10. Mask patterns 4e and formed by the photo process method, which serve for impurity doping on source and drain. As a result of the doping, a source 2 and a drain 3 are obrained for substrate 1. In this case, the impurity doping is arranged so that source 2 and drain 3 individually are intersected with silicon dioxide layer 10 and channel cuts 12. Thereupon, a gate electrode 6, electrodes 7 and a passivated thin film 9 are formed, thus finally obtaining a transistor of the MOS type having grooves as channel cuts in the silicon substrate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10452978A JPS5530866A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10452978A JPS5530866A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5530866A true JPS5530866A (en) | 1980-03-04 |
Family
ID=14383010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10452978A Pending JPS5530866A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5530866A (en) |
-
1978
- 1978-08-28 JP JP10452978A patent/JPS5530866A/en active Pending
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