JPS559477A - Method of making semiconductor device - Google Patents
Method of making semiconductor deviceInfo
- Publication number
- JPS559477A JPS559477A JP8278378A JP8278378A JPS559477A JP S559477 A JPS559477 A JP S559477A JP 8278378 A JP8278378 A JP 8278378A JP 8278378 A JP8278378 A JP 8278378A JP S559477 A JPS559477 A JP S559477A
- Authority
- JP
- Japan
- Prior art keywords
- film
- impurity
- region
- electrode
- introducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To reduce processes as well as to increase the accuracy of the impurity distribution in the vicinity of a drain, and to minimize aging by first introducing a low concentration of impurity through an impurity introducing window provided selectively, then introducing a high concentration of impurity through the same window.
CONSTITUTION: On both ends of a p-type Si substrate 1 are coated thick SiO2 films 21, in the region surrounded by the films 21 is coated a thin SiO2 film 22, and an electrode 31 comprising a predetermined pattern of poly-crystal Si is formed on the middle portion of the film 22. Then, on the left side film 21 from rhe middle is provided a photoresist pattern 9, the low concentration of impurity ions are implanted through the exposed film 22 to form a n-type region 65, the pattern 9 is removed and the depth of the region 65 is increased by the forced diffusion. Subsequently, theough the same window of the film 22, the high concentration of impurity ions are now implanted to form the n-type of drain source region 61 located in the substrate across an electrode 31 from the region 65. Finally, the electrode 31 is covered with a SiO2 film 24, and a respective opening is provided to form the corresponding aluminum coated electrode 7.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8278378A JPS559477A (en) | 1978-07-06 | 1978-07-06 | Method of making semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8278378A JPS559477A (en) | 1978-07-06 | 1978-07-06 | Method of making semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS559477A true JPS559477A (en) | 1980-01-23 |
Family
ID=13784005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8278378A Pending JPS559477A (en) | 1978-07-06 | 1978-07-06 | Method of making semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS559477A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193062A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Manufacture of semiconductor device |
JPS60245176A (en) * | 1984-05-18 | 1985-12-04 | Matsushita Electric Ind Co Ltd | Manufacture of mis type field effect transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49105490A (en) * | 1973-02-07 | 1974-10-05 | ||
JPS5168776A (en) * | 1974-12-06 | 1976-06-14 | Ibm | Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta |
JPS52117586A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS5368079A (en) * | 1976-11-30 | 1978-06-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Short channel mos transistor and method of producing same |
-
1978
- 1978-07-06 JP JP8278378A patent/JPS559477A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49105490A (en) * | 1973-02-07 | 1974-10-05 | ||
JPS5168776A (en) * | 1974-12-06 | 1976-06-14 | Ibm | Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta |
JPS52117586A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS5368079A (en) * | 1976-11-30 | 1978-06-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Short channel mos transistor and method of producing same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193062A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Manufacture of semiconductor device |
JPS60245176A (en) * | 1984-05-18 | 1985-12-04 | Matsushita Electric Ind Co Ltd | Manufacture of mis type field effect transistor |
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