JPS559477A - Method of making semiconductor device - Google Patents

Method of making semiconductor device

Info

Publication number
JPS559477A
JPS559477A JP8278378A JP8278378A JPS559477A JP S559477 A JPS559477 A JP S559477A JP 8278378 A JP8278378 A JP 8278378A JP 8278378 A JP8278378 A JP 8278378A JP S559477 A JPS559477 A JP S559477A
Authority
JP
Japan
Prior art keywords
film
impurity
region
electrode
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8278378A
Other languages
Japanese (ja)
Inventor
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8278378A priority Critical patent/JPS559477A/en
Publication of JPS559477A publication Critical patent/JPS559477A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To reduce processes as well as to increase the accuracy of the impurity distribution in the vicinity of a drain, and to minimize aging by first introducing a low concentration of impurity through an impurity introducing window provided selectively, then introducing a high concentration of impurity through the same window.
CONSTITUTION: On both ends of a p-type Si substrate 1 are coated thick SiO2 films 21, in the region surrounded by the films 21 is coated a thin SiO2 film 22, and an electrode 31 comprising a predetermined pattern of poly-crystal Si is formed on the middle portion of the film 22. Then, on the left side film 21 from rhe middle is provided a photoresist pattern 9, the low concentration of impurity ions are implanted through the exposed film 22 to form a n-type region 65, the pattern 9 is removed and the depth of the region 65 is increased by the forced diffusion. Subsequently, theough the same window of the film 22, the high concentration of impurity ions are now implanted to form the n-type of drain source region 61 located in the substrate across an electrode 31 from the region 65. Finally, the electrode 31 is covered with a SiO2 film 24, and a respective opening is provided to form the corresponding aluminum coated electrode 7.
COPYRIGHT: (C)1980,JPO&Japio
JP8278378A 1978-07-06 1978-07-06 Method of making semiconductor device Pending JPS559477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8278378A JPS559477A (en) 1978-07-06 1978-07-06 Method of making semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8278378A JPS559477A (en) 1978-07-06 1978-07-06 Method of making semiconductor device

Publications (1)

Publication Number Publication Date
JPS559477A true JPS559477A (en) 1980-01-23

Family

ID=13784005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8278378A Pending JPS559477A (en) 1978-07-06 1978-07-06 Method of making semiconductor device

Country Status (1)

Country Link
JP (1) JPS559477A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193062A (en) * 1981-05-22 1982-11-27 Nec Corp Manufacture of semiconductor device
JPS60245176A (en) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Manufacture of mis type field effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105490A (en) * 1973-02-07 1974-10-05
JPS5168776A (en) * 1974-12-06 1976-06-14 Ibm Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta
JPS52117586A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS5368079A (en) * 1976-11-30 1978-06-17 Cho Lsi Gijutsu Kenkyu Kumiai Short channel mos transistor and method of producing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105490A (en) * 1973-02-07 1974-10-05
JPS5168776A (en) * 1974-12-06 1976-06-14 Ibm Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta
JPS52117586A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS5368079A (en) * 1976-11-30 1978-06-17 Cho Lsi Gijutsu Kenkyu Kumiai Short channel mos transistor and method of producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193062A (en) * 1981-05-22 1982-11-27 Nec Corp Manufacture of semiconductor device
JPS60245176A (en) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Manufacture of mis type field effect transistor

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