JPS52117586A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52117586A
JPS52117586A JP3549976A JP3549976A JPS52117586A JP S52117586 A JPS52117586 A JP S52117586A JP 3549976 A JP3549976 A JP 3549976A JP 3549976 A JP3549976 A JP 3549976A JP S52117586 A JPS52117586 A JP S52117586A
Authority
JP
Japan
Prior art keywords
domain
semiconductor device
inverse
providing
channel length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3549976A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3549976A priority Critical patent/JPS52117586A/en
Publication of JPS52117586A publication Critical patent/JPS52117586A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Abstract

PURPOSE: To enable MIS transistor having small channel length, high gain, and high inverse voltage, by providing the inverse conductive domain having low effective density between the drain source domain and gate domain.
COPYRIGHT: (C)1977,JPO&Japio
JP3549976A 1976-03-30 1976-03-30 Semiconductor device Pending JPS52117586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3549976A JPS52117586A (en) 1976-03-30 1976-03-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3549976A JPS52117586A (en) 1976-03-30 1976-03-30 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5413883A Division JPS58194367A (en) 1983-03-30 1983-03-30 Insulated gate field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS52117586A true JPS52117586A (en) 1977-10-03

Family

ID=12443433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3549976A Pending JPS52117586A (en) 1976-03-30 1976-03-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52117586A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136276A (en) * 1978-04-14 1979-10-23 Agency Of Ind Science & Technol Manufacture for semiconductor device
JPS559477A (en) * 1978-07-06 1980-01-23 Nec Corp Method of making semiconductor device
JPS5563872A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit
JPS5571069A (en) * 1978-11-22 1980-05-28 Nec Corp Sos mos transistor and its manufacturing process
JPS55154771A (en) * 1979-05-21 1980-12-02 Ibm Method of forming field effect transistor
JPS5619671A (en) * 1979-07-26 1981-02-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of insulated gate type field effect transistor
US6312996B1 (en) 1998-10-19 2001-11-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6534829B2 (en) 1998-06-25 2003-03-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136276A (en) * 1978-04-14 1979-10-23 Agency Of Ind Science & Technol Manufacture for semiconductor device
JPS559477A (en) * 1978-07-06 1980-01-23 Nec Corp Method of making semiconductor device
JPS5563872A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit
JPS5571069A (en) * 1978-11-22 1980-05-28 Nec Corp Sos mos transistor and its manufacturing process
JPS55154771A (en) * 1979-05-21 1980-12-02 Ibm Method of forming field effect transistor
JPS626671B2 (en) * 1979-05-21 1987-02-12 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5619671A (en) * 1979-07-26 1981-02-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of insulated gate type field effect transistor
US6534829B2 (en) 1998-06-25 2003-03-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6312996B1 (en) 1998-10-19 2001-11-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

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