JPS5291381A - Field effect type semiconductor device - Google Patents

Field effect type semiconductor device

Info

Publication number
JPS5291381A
JPS5291381A JP770876A JP770876A JPS5291381A JP S5291381 A JPS5291381 A JP S5291381A JP 770876 A JP770876 A JP 770876A JP 770876 A JP770876 A JP 770876A JP S5291381 A JPS5291381 A JP S5291381A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
field effect
effect type
domain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP770876A
Other languages
Japanese (ja)
Other versions
JPS6110987B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP770876A priority Critical patent/JPS5291381A/en
Publication of JPS5291381A publication Critical patent/JPS5291381A/en
Publication of JPS6110987B2 publication Critical patent/JPS6110987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To suppress the parasitic effect of short channel type transistor operation due to the immersion of depletion layer to conductive domain and to obtain FET with high voltage and high reliability, by providing the conductive type domain with high density governing electric operational performance to the concave portion apart from the inverse conductive type domain.
JP770876A 1976-01-26 1976-01-26 Field effect type semiconductor device Granted JPS5291381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP770876A JPS5291381A (en) 1976-01-26 1976-01-26 Field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP770876A JPS5291381A (en) 1976-01-26 1976-01-26 Field effect type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5291381A true JPS5291381A (en) 1977-08-01
JPS6110987B2 JPS6110987B2 (en) 1986-04-01

Family

ID=11673230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP770876A Granted JPS5291381A (en) 1976-01-26 1976-01-26 Field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5291381A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPS62500898A (en) * 1984-11-26 1987-04-09 アメリカン テレフオン アンド テレグラフ カムパニ− Trench gate structure
JP2004096093A (en) * 2002-07-18 2004-03-25 Hynix Semiconductor Inc Manufacture of semiconductor memory element
JP4511007B2 (en) * 2000-09-29 2010-07-28 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPH0465549B2 (en) * 1979-03-29 1992-10-20 Fujitsu Ltd
JPS62500898A (en) * 1984-11-26 1987-04-09 アメリカン テレフオン アンド テレグラフ カムパニ− Trench gate structure
JP4511007B2 (en) * 2000-09-29 2010-07-28 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP2004096093A (en) * 2002-07-18 2004-03-25 Hynix Semiconductor Inc Manufacture of semiconductor memory element
JP4669655B2 (en) * 2002-07-18 2011-04-13 株式会社ハイニックスセミコンダクター Manufacturing method of semiconductor memory device

Also Published As

Publication number Publication date
JPS6110987B2 (en) 1986-04-01

Similar Documents

Publication Publication Date Title
JPS52131483A (en) Mis-type semiconductor device
JPS5366181A (en) High dielectric strength mis type transistor
JPS5222480A (en) Insulating gate field effect transistor
JPS5691473A (en) Semiconductor
JPS5291381A (en) Field effect type semiconductor device
JPS52117586A (en) Semiconductor device
UST964009I4 (en) High voltage semiconductor structure
JPS5384570A (en) Field effect semiconductor device and its manufacture
GB1327298A (en) Insulated gate-field-effect transistor with variable gain
JPS5598868A (en) Insulated gate type field effect semiconductor device
JPS5382277A (en) Schottky gate field effect transistor
JPS52117587A (en) Insulating gate type field effect semiconductor device
JPS6454762A (en) Insulated gate field effect transistor
JPS52103974A (en) Semicondcutor integrated circuit device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS52108777A (en) Field-effect transistor for schottky barrier layer
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS5772386A (en) Junction type field-effect semiconductor device
JPS5363985A (en) Semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS52117581A (en) Insulating gate type field effect transistor
JPS57121271A (en) Field effect transistor
JPS5371573A (en) Field effect transistor of isolating gate type
JPS572574A (en) Insulated gate type field effect transistor
JPS51137385A (en) Complementary type insulating gate field effect semi conductor device