JPS6454762A - Insulated gate field effect transistor - Google Patents
Insulated gate field effect transistorInfo
- Publication number
- JPS6454762A JPS6454762A JP21029387A JP21029387A JPS6454762A JP S6454762 A JPS6454762 A JP S6454762A JP 21029387 A JP21029387 A JP 21029387A JP 21029387 A JP21029387 A JP 21029387A JP S6454762 A JPS6454762 A JP S6454762A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- channel
- thickness
- region
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent a transistor from deteriorating due to hot carrier in semiconductor by making the thickness of an insulating film connected to source, drain thinner than that of a gate insulating film. CONSTITUTION:An insulating silicon oxide film 2 of a FET provided on a silicon semiconductor substrate 1 is in contact with a source region 5, a drain region 6, and the thickness of a region covering them without 0.2mum is made thinner than that of the film 2 along a central channel of the gate electrode of the FET. A gate voltage of the part is effectively enhanced due to the reduced thickness, the high electric field region near the regions 5, 6 are intruded to the depth side of the regions 5, 6 to suppress the influence to a channel. As a result, it can prevent the channel from damaging due to a hot carrier effect to enhance the reliability of the FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21029387A JPS6454762A (en) | 1987-08-26 | 1987-08-26 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21029387A JPS6454762A (en) | 1987-08-26 | 1987-08-26 | Insulated gate field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6454762A true JPS6454762A (en) | 1989-03-02 |
Family
ID=16586999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21029387A Pending JPS6454762A (en) | 1987-08-26 | 1987-08-26 | Insulated gate field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6454762A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03115268U (en) * | 1990-03-10 | 1991-11-28 | ||
| EP0856892A2 (en) * | 1997-01-30 | 1998-08-05 | Oki Electric Industry Co., Ltd. | MOSFET and manufacturing method thereof |
| US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
1987
- 1987-08-26 JP JP21029387A patent/JPS6454762A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03115268U (en) * | 1990-03-10 | 1991-11-28 | ||
| EP0856892A2 (en) * | 1997-01-30 | 1998-08-05 | Oki Electric Industry Co., Ltd. | MOSFET and manufacturing method thereof |
| EP0856892A3 (en) * | 1997-01-30 | 1999-07-14 | Oki Electric Industry Co., Ltd. | MOSFET and manufacturing method thereof |
| US9666614B2 (en) | 2002-04-09 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US9406806B2 (en) | 2002-04-09 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10050065B2 (en) | 2002-04-09 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10083995B2 (en) | 2002-04-09 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10700106B2 (en) | 2002-04-09 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10854642B2 (en) | 2002-04-09 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US11101299B2 (en) | 2002-04-09 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US10527903B2 (en) | 2002-05-17 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US11422423B2 (en) | 2002-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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