JPS56126977A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS56126977A
JPS56126977A JP3143080A JP3143080A JPS56126977A JP S56126977 A JPS56126977 A JP S56126977A JP 3143080 A JP3143080 A JP 3143080A JP 3143080 A JP3143080 A JP 3143080A JP S56126977 A JPS56126977 A JP S56126977A
Authority
JP
Japan
Prior art keywords
gate
source
region
drain
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3143080A
Other languages
Japanese (ja)
Inventor
Kiyoshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3143080A priority Critical patent/JPS56126977A/en
Publication of JPS56126977A publication Critical patent/JPS56126977A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To largely reduce the parasitic capacity between the gate and the source and between the gate and the drain of a junction type field effect transistor by covering the part contacting with the source and drain regions at the sides of the gate region with an insulating layer. CONSTITUTION:An N type region 22 operating as source, channel and drain regions and a P type region 26 operating as a gate region are formed in a P type Si substrate 21. An insulating film 23 is formed on the surface of the substrate 21, and the electrodes 27 of source S, gate G and drain D are formed through holes of the film 23. Further, the region 26 is brought into contact through the insulating film 25 with the source and drain regions of the region 22. With such a configuration, the parasitic capacity between the gate and the drain and between the gate and the source can be largely reduced.
JP3143080A 1980-03-11 1980-03-11 Junction type field effect transistor Pending JPS56126977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3143080A JPS56126977A (en) 1980-03-11 1980-03-11 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3143080A JPS56126977A (en) 1980-03-11 1980-03-11 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS56126977A true JPS56126977A (en) 1981-10-05

Family

ID=12331017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3143080A Pending JPS56126977A (en) 1980-03-11 1980-03-11 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS56126977A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251671A (en) * 1984-05-29 1985-12-12 Fujitsu Ltd Field-effect type transistor and manufacture thereof
JPS62158363A (en) * 1985-12-28 1987-07-14 Matsushita Electronics Corp Manufacture of semiconductor device
FR2653935A1 (en) * 1989-10-30 1991-05-03 Mitsubishi Electric Corp JUNCTION FIELD EFFECT TRANSISTOR HAVING A PLACED STRUCTURE AND MANUFACTURING METHOD.
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
CN103764311A (en) * 2011-08-29 2014-04-30 丰田自动车株式会社 Metal mold for hot pressing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019377A (en) * 1973-06-20 1975-02-28
JPS5061984A (en) * 1973-10-01 1975-05-27
JPS5364480A (en) * 1976-11-22 1978-06-08 Toshiba Corp Field effect semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019377A (en) * 1973-06-20 1975-02-28
JPS5061984A (en) * 1973-10-01 1975-05-27
JPS5364480A (en) * 1976-11-22 1978-06-08 Toshiba Corp Field effect semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251671A (en) * 1984-05-29 1985-12-12 Fujitsu Ltd Field-effect type transistor and manufacture thereof
JPS62158363A (en) * 1985-12-28 1987-07-14 Matsushita Electronics Corp Manufacture of semiconductor device
FR2653935A1 (en) * 1989-10-30 1991-05-03 Mitsubishi Electric Corp JUNCTION FIELD EFFECT TRANSISTOR HAVING A PLACED STRUCTURE AND MANUFACTURING METHOD.
US5159414A (en) * 1989-10-30 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Junction field effect transistor of a compound semiconductor
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
CN103764311A (en) * 2011-08-29 2014-04-30 丰田自动车株式会社 Metal mold for hot pressing

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