JPS6417475A - Manufacture of mos semiconductor device - Google Patents
Manufacture of mos semiconductor deviceInfo
- Publication number
- JPS6417475A JPS6417475A JP17352987A JP17352987A JPS6417475A JP S6417475 A JPS6417475 A JP S6417475A JP 17352987 A JP17352987 A JP 17352987A JP 17352987 A JP17352987 A JP 17352987A JP S6417475 A JPS6417475 A JP S6417475A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- regions
- lower gate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a lower gate electrode which is not overlapped with the source and drain between insulating regions by forming the insulating regions with an upper gate electrodes as a mask on the surface of a substrate in a double-side gate type MOSFET. CONSTITUTION:A lower gate insulating film 2, a source region 9, a drain layer 10, a channel layer 11, an upper insulating film 4 and an upper gate electrode 5 are formed on a substrate 1. Then, with the electrode 5 as a mask a semiconductor high resistance substance is doped on the substrate 1 to form an insulator region 7 on the substrate 1. A lower gate electrode 8 which is completely aligned to the electrode 5 is formed between the insulator regions. When it is constructed in this manner, the overlapping capacities of the electrode 8, the regions 9, 10 can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17352987A JPS6417475A (en) | 1987-07-11 | 1987-07-11 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17352987A JPS6417475A (en) | 1987-07-11 | 1987-07-11 | Manufacture of mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6417475A true JPS6417475A (en) | 1989-01-20 |
Family
ID=15962219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17352987A Pending JPS6417475A (en) | 1987-07-11 | 1987-07-11 | Manufacture of mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6417475A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061647A (en) * | 1990-10-12 | 1991-10-29 | Motorola, Inc. | ITLDD transistor having variable work function and method for fabricating the same |
| JPH04297348A (en) * | 1991-03-26 | 1992-10-21 | Nissan Shatai Co Ltd | Peripheral edge sealing structure for vehicle body opening part |
-
1987
- 1987-07-11 JP JP17352987A patent/JPS6417475A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061647A (en) * | 1990-10-12 | 1991-10-29 | Motorola, Inc. | ITLDD transistor having variable work function and method for fabricating the same |
| JPH04297348A (en) * | 1991-03-26 | 1992-10-21 | Nissan Shatai Co Ltd | Peripheral edge sealing structure for vehicle body opening part |
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