JPS5745257A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745257A
JPS5745257A JP55120496A JP12049680A JPS5745257A JP S5745257 A JPS5745257 A JP S5745257A JP 55120496 A JP55120496 A JP 55120496A JP 12049680 A JP12049680 A JP 12049680A JP S5745257 A JPS5745257 A JP S5745257A
Authority
JP
Japan
Prior art keywords
high molecular
region
type
regions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55120496A
Other languages
Japanese (ja)
Inventor
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55120496A priority Critical patent/JPS5745257A/en
Publication of JPS5745257A publication Critical patent/JPS5745257A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the accuracy of size, and to flatten the surface by burying an organic high molecular layer into an etching section in the insulation separation of the CMOSIC. CONSTITUTION:P type imprurities are doped to one region of an upper surface of an N type semicondcutor proper 16, an N type region 1 and a P type region 2 are formed, and grooves are formed by etching boundaries between the both regions 1, 2. The surface of the semiconductor proper 16 is thinly oxidized to shape an oxide film 18, and the film 18 is coated with a heatproof high molecular organic layer (such as polyimide) 19 so that the surface is flattened. One part of the heatproof high molecular organic material 19 is removed, and gate electrodes 5, 9 are formed to the oxide film layer 18. Impurity regions 3, 7 are each shaped into the regions 1, 2 so as to contact with the side surfaces of the grooves, the surface is coated with an insulating film 11, electrode wiring 12 is formed and the CMOSIC is constituted. Accordingly, a separation region is narrowed, and a parasitic MOS effect can be prevented.
JP55120496A 1980-08-29 1980-08-29 Manufacture of semiconductor device Pending JPS5745257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120496A JPS5745257A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120496A JPS5745257A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5745257A true JPS5745257A (en) 1982-03-15

Family

ID=14787630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120496A Pending JPS5745257A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745257A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955055A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS6038861A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Complementary type semiconductor integrated circuit device and manufacture thereof
JPS62229969A (en) * 1986-03-31 1987-10-08 Toshiba Corp Manufacture of supplementary semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955055A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS6038861A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Complementary type semiconductor integrated circuit device and manufacture thereof
JPH0469433B2 (en) * 1983-08-12 1992-11-06 Hitachi Ltd
JPS62229969A (en) * 1986-03-31 1987-10-08 Toshiba Corp Manufacture of supplementary semiconductor device

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