JPS5745257A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5745257A JPS5745257A JP55120496A JP12049680A JPS5745257A JP S5745257 A JPS5745257 A JP S5745257A JP 55120496 A JP55120496 A JP 55120496A JP 12049680 A JP12049680 A JP 12049680A JP S5745257 A JPS5745257 A JP S5745257A
- Authority
- JP
- Japan
- Prior art keywords
- high molecular
- region
- type
- regions
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve the accuracy of size, and to flatten the surface by burying an organic high molecular layer into an etching section in the insulation separation of the CMOSIC. CONSTITUTION:P type imprurities are doped to one region of an upper surface of an N type semicondcutor proper 16, an N type region 1 and a P type region 2 are formed, and grooves are formed by etching boundaries between the both regions 1, 2. The surface of the semiconductor proper 16 is thinly oxidized to shape an oxide film 18, and the film 18 is coated with a heatproof high molecular organic layer (such as polyimide) 19 so that the surface is flattened. One part of the heatproof high molecular organic material 19 is removed, and gate electrodes 5, 9 are formed to the oxide film layer 18. Impurity regions 3, 7 are each shaped into the regions 1, 2 so as to contact with the side surfaces of the grooves, the surface is coated with an insulating film 11, electrode wiring 12 is formed and the CMOSIC is constituted. Accordingly, a separation region is narrowed, and a parasitic MOS effect can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55120496A JPS5745257A (en) | 1980-08-29 | 1980-08-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55120496A JPS5745257A (en) | 1980-08-29 | 1980-08-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5745257A true JPS5745257A (en) | 1982-03-15 |
Family
ID=14787630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55120496A Pending JPS5745257A (en) | 1980-08-29 | 1980-08-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745257A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955055A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6038861A (en) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | Complementary type semiconductor integrated circuit device and manufacture thereof |
JPS62229969A (en) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | Manufacture of supplementary semiconductor device |
-
1980
- 1980-08-29 JP JP55120496A patent/JPS5745257A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955055A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6038861A (en) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | Complementary type semiconductor integrated circuit device and manufacture thereof |
JPH0469433B2 (en) * | 1983-08-12 | 1992-11-06 | Hitachi Ltd | |
JPS62229969A (en) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | Manufacture of supplementary semiconductor device |
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