JPS56157042A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56157042A
JPS56157042A JP6024680A JP6024680A JPS56157042A JP S56157042 A JPS56157042 A JP S56157042A JP 6024680 A JP6024680 A JP 6024680A JP 6024680 A JP6024680 A JP 6024680A JP S56157042 A JPS56157042 A JP S56157042A
Authority
JP
Japan
Prior art keywords
region
semiconductor
conductive layer
collector
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6024680A
Other languages
Japanese (ja)
Other versions
JPH0213460B2 (en
Inventor
Shigeo Shibata
Hirohiko Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6024680A priority Critical patent/JPS56157042A/en
Publication of JPS56157042A publication Critical patent/JPS56157042A/en
Publication of JPH0213460B2 publication Critical patent/JPH0213460B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable to form easily an insulating layer on the outer surface of a conductive layer with regard to the semiconductor of bipolar transistor, MISFET, etc., by a method wherein semiconductor regions and conductive layers of the semiconductor device are formed having self-alignment with each other and the semiconductor regions are positioned surely in an element forming region. CONSTITUTION:The semiconductor device is formed as an NPN type bipolar transistor being formed in the element forming region 23 divided and partitioned by insulating regions 21 formed from the main face side in a semiconductor substrate 15 making the region interposed between semiconductor regions 26, 28 formed in this element forming region 23 as a collector region, semiconductor regions 13, 26 as to be used both as collector compensation region and as lead out region, a semiconductor region 27 as a collector lead out region, a conductive region 44 as a collector electrode, a conductive layer 51 as a collector wiring, a semiconductor region 28 as a base region, a semiconductor region 41 as a base lead out region, a conductive layer 39 as a base electrode, a conductive layer 52 as a base wiring, a semiconductor region 42 as an emitter region, a conductive layer 43 as an emitter electrode and a conductive layer 50 as an emitter wiring.
JP6024680A 1980-05-06 1980-05-06 Manufacture of semiconductor device Granted JPS56157042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6024680A JPS56157042A (en) 1980-05-06 1980-05-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6024680A JPS56157042A (en) 1980-05-06 1980-05-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56157042A true JPS56157042A (en) 1981-12-04
JPH0213460B2 JPH0213460B2 (en) 1990-04-04

Family

ID=13136619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6024680A Granted JPS56157042A (en) 1980-05-06 1980-05-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157042A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835970A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6038873A (en) * 1983-08-11 1985-02-28 Rohm Co Ltd Manufacture of semiconductor device
US4935375A (en) * 1985-12-20 1990-06-19 Licentia Patent-Verwaltungs-Gmbh Method of making a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271994A (en) * 1975-12-11 1977-06-15 Nec Corp Semiconductor integrated circuit device
JPS5353254A (en) * 1976-10-26 1978-05-15 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271994A (en) * 1975-12-11 1977-06-15 Nec Corp Semiconductor integrated circuit device
JPS5353254A (en) * 1976-10-26 1978-05-15 Toshiba Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835970A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device
JPH0126185B2 (en) * 1981-08-28 1989-05-22 Fujitsu Ltd
JPS6038873A (en) * 1983-08-11 1985-02-28 Rohm Co Ltd Manufacture of semiconductor device
US4935375A (en) * 1985-12-20 1990-06-19 Licentia Patent-Verwaltungs-Gmbh Method of making a semiconductor device

Also Published As

Publication number Publication date
JPH0213460B2 (en) 1990-04-04

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