JPS6410667A - Manufacture of bipolar transistor - Google Patents
Manufacture of bipolar transistorInfo
- Publication number
- JPS6410667A JPS6410667A JP16614987A JP16614987A JPS6410667A JP S6410667 A JPS6410667 A JP S6410667A JP 16614987 A JP16614987 A JP 16614987A JP 16614987 A JP16614987 A JP 16614987A JP S6410667 A JPS6410667 A JP S6410667A
- Authority
- JP
- Japan
- Prior art keywords
- forming region
- out forming
- metal
- lead
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To enable manufacturing a fine product capable of high speed operation, with a simple process, by exposing a base lead-out forming region and a collector lead-out forming region on the surface of a semiconductor substrate, covering an emitter forming region with an insulating layer, and forming, in this state, a conductor layer having metal, on the semiconductor substrate. CONSTITUTION:As a second insulating layer is formed so as to cover an emitter forming region 13a, said region is not contaminated by metal when a conductor layer 25 having metal is formed on a semiconductor substrate 14. After insulating layers 15, 22 are formed on the part except a base lead-out forming region 13a and a collector lead-out forming region 13b, the conductor layer 25 having metal is formed on the semiconductor substrate 14. Therefore, it is possible for the conductor layer 25 not to be formed on the region except the base lead-out forming region 13a and the collector lead-out forming region 13b. On the base lead-out forming region 13a and a collector lead-out forming region 13b, the conducted layer 25 having metal is formed at the same time by self alignment, and a fine product can be manufactured with a simple process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62166149A JP2623575B2 (en) | 1987-07-02 | 1987-07-02 | Manufacturing method of bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62166149A JP2623575B2 (en) | 1987-07-02 | 1987-07-02 | Manufacturing method of bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6410667A true JPS6410667A (en) | 1989-01-13 |
JP2623575B2 JP2623575B2 (en) | 1997-06-25 |
Family
ID=15825966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62166149A Expired - Lifetime JP2623575B2 (en) | 1987-07-02 | 1987-07-02 | Manufacturing method of bipolar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2623575B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194673A (en) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-07-02 JP JP62166149A patent/JP2623575B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194673A (en) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2623575B2 (en) | 1997-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5249772A (en) | Process for production of semiconductor device | |
JPS5324277A (en) | Semiconductor devic e and its production | |
JPS5643749A (en) | Semiconductor device and its manufacture | |
JPS6410667A (en) | Manufacture of bipolar transistor | |
JPS5278382A (en) | Semiconductor device | |
JPS5578532A (en) | Formation of electrode for semiconductor device | |
JPS5643740A (en) | Semiconductor wafer | |
KR880014690A (en) | CMOS integrated circuit having upper substrate contacts and its manufacturing method | |
JPS57167659A (en) | Manufacture of semiconductor device | |
JPS56157042A (en) | Manufacture of semiconductor device | |
JPS5246783A (en) | Process for production of semiconductor integrated circuit | |
JPS5263080A (en) | Production of semiconductor integrated circuit device | |
JPS5710963A (en) | Semiconductor device and manufacture thereof | |
JPS647518A (en) | Manufacture of semiconductor device | |
JPS5235584A (en) | Manufacturing process of semiconductor device | |
JPS51113461A (en) | A method for manufacturing semiconductor devices | |
JPS5240061A (en) | Semiconductor device and process for production of same | |
JPS5732664A (en) | Semiconductor integrated circuit device | |
JPS57199251A (en) | Semiconductor device | |
JPS5248974A (en) | Process for production of diffusion type semiconductor device | |
JPS57197863A (en) | Semiconductor integrated circuit device | |
JPS57102068A (en) | Semiconductor integrated circuit | |
JPS5710964A (en) | Manufacture of semiconductor device | |
JPS5232682A (en) | Manufacturing process of semiconductor device | |
JPS5310281A (en) | Production of mos type semiconductor integrated circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20080411 |