JPS5232682A - Manufacturing process of semiconductor device - Google Patents
Manufacturing process of semiconductor deviceInfo
- Publication number
- JPS5232682A JPS5232682A JP10878375A JP10878375A JPS5232682A JP S5232682 A JPS5232682 A JP S5232682A JP 10878375 A JP10878375 A JP 10878375A JP 10878375 A JP10878375 A JP 10878375A JP S5232682 A JPS5232682 A JP S5232682A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing process
- steadly
- semiconductors
- manufactured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: The oxidization film is formed at the lower part of gate region of semiconductor device in order to secure insulation with substrate, through which input can be taken in independently. In this way, semiconductors of high integration capability can be steadly manufactured.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10878375A JPS5232682A (en) | 1975-09-08 | 1975-09-08 | Manufacturing process of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10878375A JPS5232682A (en) | 1975-09-08 | 1975-09-08 | Manufacturing process of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5232682A true JPS5232682A (en) | 1977-03-12 |
Family
ID=14493355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10878375A Pending JPS5232682A (en) | 1975-09-08 | 1975-09-08 | Manufacturing process of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5232682A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141760A (en) * | 1979-04-21 | 1980-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131685A (en) * | 1973-04-20 | 1974-12-17 | ||
JPS5028785A (en) * | 1973-07-13 | 1975-03-24 | ||
JPS5081074A (en) * | 1973-11-14 | 1975-07-01 |
-
1975
- 1975-09-08 JP JP10878375A patent/JPS5232682A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131685A (en) * | 1973-04-20 | 1974-12-17 | ||
JPS5028785A (en) * | 1973-07-13 | 1975-03-24 | ||
JPS5081074A (en) * | 1973-11-14 | 1975-07-01 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141760A (en) * | 1979-04-21 | 1980-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
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