JPS5411687A - Manufacture for semiconductor integrated circuit - Google Patents
Manufacture for semiconductor integrated circuitInfo
- Publication number
- JPS5411687A JPS5411687A JP7610077A JP7610077A JPS5411687A JP S5411687 A JPS5411687 A JP S5411687A JP 7610077 A JP7610077 A JP 7610077A JP 7610077 A JP7610077 A JP 7610077A JP S5411687 A JPS5411687 A JP S5411687A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- integrated circuit
- semiconductor integrated
- polycrystal silicon
- abopt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To abopt the advantages of MOS construction and high resistivity load with minimized manufacturing process increase, by simultaneously forming the high resistor on the same polycrystal silicon layer of polycrystal silicon gate E, DMOS.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7610077A JPS5411687A (en) | 1977-06-28 | 1977-06-28 | Manufacture for semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7610077A JPS5411687A (en) | 1977-06-28 | 1977-06-28 | Manufacture for semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5411687A true JPS5411687A (en) | 1979-01-27 |
Family
ID=13595442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7610077A Pending JPS5411687A (en) | 1977-06-28 | 1977-06-28 | Manufacture for semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5411687A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55102272A (en) * | 1979-01-31 | 1980-08-05 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of fabricating mos semiconductor device |
US5026559A (en) * | 1989-04-03 | 1991-06-25 | Kinaform Technology, Inc. | Sustained-release pharmaceutical preparation |
US5304502A (en) * | 1988-11-08 | 1994-04-19 | Yamaha Corporation | Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor |
-
1977
- 1977-06-28 JP JP7610077A patent/JPS5411687A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55102272A (en) * | 1979-01-31 | 1980-08-05 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of fabricating mos semiconductor device |
US5304502A (en) * | 1988-11-08 | 1994-04-19 | Yamaha Corporation | Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor |
US5026559A (en) * | 1989-04-03 | 1991-06-25 | Kinaform Technology, Inc. | Sustained-release pharmaceutical preparation |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5299786A (en) | Mos integrated circuit | |
JPS5230388A (en) | Semiconductor integrated circuit device constructed with insulating ga te field effect transistor | |
JPS5293278A (en) | Manufacture for mos type semiconductor intergrated circuit | |
JPS5423484A (en) | Semiconductor integrated circuit and its manufacture | |
JPS52156580A (en) | Semiconductor integrated circuit device and its production | |
JPS5411687A (en) | Manufacture for semiconductor integrated circuit | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS53112057A (en) | Production of semiconductor device | |
JPS51118381A (en) | Manufacturing process for semiconductor unit | |
JPS5427382A (en) | Semiconductor integrated circuit device | |
JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
JPS522180A (en) | Method of fabricating mos semiconductor integrated circuit | |
JPS53121490A (en) | Semiconductor device | |
JPS5346287A (en) | Production of semiconductor integrated circuit | |
JPS5363982A (en) | Production of silicon gate type mis semiconductor | |
JPS5248479A (en) | Semiconductor device and process for production of the same | |
JPS5265689A (en) | Semiconductor integrated circuit and its production | |
JPS54586A (en) | Production of semiconductor device | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS5399782A (en) | Semiconductor integrated circuit device and its manufacture | |
JPS5373976A (en) | Manufacture for schottky barrier type semiconductor device | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS5286092A (en) | Semiconductor integrated circuit | |
JPS53108385A (en) | Manufacture for semiconductor device | |
JPS52135689A (en) | Production of semiconductor device |