JPS5399782A - Semiconductor integrated circuit device and its manufacture - Google Patents
Semiconductor integrated circuit device and its manufactureInfo
- Publication number
- JPS5399782A JPS5399782A JP1360577A JP1360577A JPS5399782A JP S5399782 A JPS5399782 A JP S5399782A JP 1360577 A JP1360577 A JP 1360577A JP 1360577 A JP1360577 A JP 1360577A JP S5399782 A JPS5399782 A JP S5399782A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- integrated circuit
- semiconductor integrated
- circuit device
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To form an IC device within the isolated region, by providing a high-concentration layer of impurities featuring the same conduction type as the substarate under the insulation region which is formed selectively from the main surface side of the substrate with a connection to the insulation layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1360577A JPS5399782A (en) | 1977-02-10 | 1977-02-10 | Semiconductor integrated circuit device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1360577A JPS5399782A (en) | 1977-02-10 | 1977-02-10 | Semiconductor integrated circuit device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5399782A true JPS5399782A (en) | 1978-08-31 |
Family
ID=11837854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1360577A Pending JPS5399782A (en) | 1977-02-10 | 1977-02-10 | Semiconductor integrated circuit device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5399782A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232350A (en) * | 1988-02-18 | 1988-09-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
WO2002045146A1 (en) * | 2000-11-30 | 2002-06-06 | Telephus, Inc. | Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242079A (en) * | 1975-09-30 | 1977-04-01 | Toshiba Corp | Process for producing semiconductor |
-
1977
- 1977-02-10 JP JP1360577A patent/JPS5399782A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242079A (en) * | 1975-09-30 | 1977-04-01 | Toshiba Corp | Process for producing semiconductor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232350A (en) * | 1988-02-18 | 1988-09-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
WO2002045146A1 (en) * | 2000-11-30 | 2002-06-06 | Telephus, Inc. | Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same |
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