JPS5399782A - Semiconductor integrated circuit device and its manufacture - Google Patents

Semiconductor integrated circuit device and its manufacture

Info

Publication number
JPS5399782A
JPS5399782A JP1360577A JP1360577A JPS5399782A JP S5399782 A JPS5399782 A JP S5399782A JP 1360577 A JP1360577 A JP 1360577A JP 1360577 A JP1360577 A JP 1360577A JP S5399782 A JPS5399782 A JP S5399782A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
semiconductor integrated
circuit device
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1360577A
Other languages
Japanese (ja)
Inventor
Kazuo Imai
Yutaka Yoriume
Kuniyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1360577A priority Critical patent/JPS5399782A/en
Publication of JPS5399782A publication Critical patent/JPS5399782A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To form an IC device within the isolated region, by providing a high-concentration layer of impurities featuring the same conduction type as the substarate under the insulation region which is formed selectively from the main surface side of the substrate with a connection to the insulation layer.
COPYRIGHT: (C)1978,JPO&Japio
JP1360577A 1977-02-10 1977-02-10 Semiconductor integrated circuit device and its manufacture Pending JPS5399782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1360577A JPS5399782A (en) 1977-02-10 1977-02-10 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1360577A JPS5399782A (en) 1977-02-10 1977-02-10 Semiconductor integrated circuit device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5399782A true JPS5399782A (en) 1978-08-31

Family

ID=11837854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1360577A Pending JPS5399782A (en) 1977-02-10 1977-02-10 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5399782A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232350A (en) * 1988-02-18 1988-09-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
WO2002045146A1 (en) * 2000-11-30 2002-06-06 Telephus, Inc. Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242079A (en) * 1975-09-30 1977-04-01 Toshiba Corp Process for producing semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242079A (en) * 1975-09-30 1977-04-01 Toshiba Corp Process for producing semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232350A (en) * 1988-02-18 1988-09-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
WO2002045146A1 (en) * 2000-11-30 2002-06-06 Telephus, Inc. Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same

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