JPS5236983A - Mos type semiconductor integrated circuit device and process for produ ction of same - Google Patents

Mos type semiconductor integrated circuit device and process for produ ction of same

Info

Publication number
JPS5236983A
JPS5236983A JP50113343A JP11334375A JPS5236983A JP S5236983 A JPS5236983 A JP S5236983A JP 50113343 A JP50113343 A JP 50113343A JP 11334375 A JP11334375 A JP 11334375A JP S5236983 A JPS5236983 A JP S5236983A
Authority
JP
Japan
Prior art keywords
integrated circuit
same
type semiconductor
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50113343A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50113343A priority Critical patent/JPS5236983A/en
Publication of JPS5236983A publication Critical patent/JPS5236983A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: Si substrate is used to make a silicon on insulator construction, whereby MOSFET featuring higher speed and higher degree of integration by having the advantages of both conventional MOSFET and SMOS-MOSFET is composed.
COPYRIGHT: (C)1977,JPO&Japio
JP50113343A 1975-09-18 1975-09-18 Mos type semiconductor integrated circuit device and process for produ ction of same Pending JPS5236983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50113343A JPS5236983A (en) 1975-09-18 1975-09-18 Mos type semiconductor integrated circuit device and process for produ ction of same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50113343A JPS5236983A (en) 1975-09-18 1975-09-18 Mos type semiconductor integrated circuit device and process for produ ction of same

Publications (1)

Publication Number Publication Date
JPS5236983A true JPS5236983A (en) 1977-03-22

Family

ID=14609828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50113343A Pending JPS5236983A (en) 1975-09-18 1975-09-18 Mos type semiconductor integrated circuit device and process for produ ction of same

Country Status (1)

Country Link
JP (1) JPS5236983A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662369A (en) * 1979-10-26 1981-05-28 Toshiba Corp Mos semiconductor device
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
JPS5739579A (en) * 1980-08-20 1982-03-04 Toshiba Corp Mos semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830882A (en) * 1971-08-23 1973-04-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830882A (en) * 1971-08-23 1973-04-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662369A (en) * 1979-10-26 1981-05-28 Toshiba Corp Mos semiconductor device
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
JPS5739579A (en) * 1980-08-20 1982-03-04 Toshiba Corp Mos semiconductor device and manufacture thereof

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